IRL3103PBF

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1650pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	12 mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	64A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IRL3103PBF, also known as a FET (Field Effect Transistor), is a type of single MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) which is a voltage-controlled semiconductor device. These devices are widely used for switching and amplifying electronic signals in a wide range of applications.

Benefits of the IRL3103PBF

The IRL3103PBF offers superior electrical characteristics compared to standard MOSFETs. This makes it suitable for RF, high-voltage, high-power, and consumer applications. It has an exceptionally low on-resistance and gate charge, making it ideal for low power designs. The IRL3103PBF also has a high bandwidth and slew rate, making it ideal for switching applications. This FET also has excellent thermal characteristics, making it a well-suited choice for applications with high junction temperatures.

Applications of the IRL3103PBF

The IRL3103PBF is commonly used in a variety of applications, including RF switches, power supply circuits, power handling equipment, gate drivers, and power amplifiers. It can be used in lighting, battery chargers, radio communication systems, audio amplifiers, and high-voltage amplifiers. Additionally, this FET can be used in a variety of automotive applications, such as fuel injection and engine start systems.

Working Principle of the IRL3103PBF

The IRL3103PBF is a single MOSFET which operates on the principle of a voltage-controlled field effect transistor. It consists of a metal-oxide-semiconductor structure whose physical properties can be adjusted by applying different voltage levels to its gate electrode. When a source-gate voltage is applied to the FET, the conductivity of the channel is changed by the potential barrier that forms at the channel interface. This channel acts as a resistor and its resistance is determined by the magnitude of the applied voltage. In other words, the IRL3103PBF operates on the principle of “voltage-controlled resistance”. When the FET is exposed to a higher voltage, its on-resistance increases while its off-resistance decreases. This mechanism reduces the drain-source resistance and allows more current to flow through the channel.

Conclusion

The IRL3103PBF is a highly efficient single MOSFET which is suitable for a variety of applications. It has a wide range of benefits, such as low power consumption, high bandwidth, and high slew rate. Additionally, its voltage-controlled resistance mechanism allows it to be used in high-power, RF, and high-voltage applications. The IRL3103PBF is a reliable and cost-effective choice for those looking for high-quality electrical performance.

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