IRL3803VPBF Allicdata Electronics
Allicdata Part #:

IRL3803VPBF-ND

Manufacturer Part#:

IRL3803VPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 140A TO-220AB
More Detail: N-Channel 30V 140A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IRL3803VPBF datasheetIRL3803VPBF Datasheet/PDF
Quantity: 1404
Stock 1404Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRL3803VPBF is a 55V, 3A, 3.2 milliohm, Single N-Channel MOSFET. This small, low-power transistor is used in a wide range of applications due to its high speed and low power consumption. In this article, we will discuss the application fields and working principle of the IRL3803VPBF.

Application Fields

The IRL3803VPBF has a wide range of applications ranging from low-power low-voltage motor control to high-speed MOSFET driver circuits. This MOSFET is commonly used in DC-DC converters, AC-DC and DC-AC converters, automotive on-board chargers, and computer ASICs. It is also used in low-power amplifier and switching circuits, high-frequency switching, and other applications that require low on-resistance and high-speed switching.

Working Principle

The IRL3803VPBF is an N-channel MOSFET, which is a three-terminal component. This MOSFET has a source, a drain, and a gate with a voltage drop between the drain and source of less than 0.4V when the device is in a low-resistance state. The working principle of the IRL3803VPBF is that a voltage applied to the gate causes a channel to form between the source and the drain. This channel is an inversion layer of electrons, and this layer allows current to pass between the source and the drain. The current passing through the channel is limited by the amount of voltage applied to the gate, and it can be increased or decreased by varying the voltage on the gate.

When the voltage applied to the gate reaches a certain level, the IRL3803VPBF will enter the saturated state, in which the voltage drop between the source and the drain will be 0.4V or less. This allows for greater current flow with less voltage applied to the gate. Once current reaches the gate, the charges in the gate will cause the MOSFET to enter its cutoff state, wherein the voltage drop between the source and the drain will be significantly higher, and no current will be allowed to flow through the device.

The IRL3803VPBF uses the concept of threshold voltage (Vth) to activate and turn off the device. The threshold voltage is the voltage at which the channel forms between the source and drain and at which the device begins to conduct, and it is denoted by the expression VGS > Vth. The lower the threshold voltage, the lower the drain current and the higher the on-resistance, and vice versa.

Conclusion

The IRL3803VPBF is a low-power, high-speed single-channel MOSFET used in a wide range of applications. This device is suitable for use in DC-DC converters, AC-DC and DC-AC converters, automotive on-board chargers, computer ASICs, and low-power amplifier and switching circuits due to its low voltage drop and low on-resistance. The IRL3803VPBF operates using the principle of threshold voltage, wherein the voltage is applied to the gate in order to open or close the channel between the source and the drain. This allows for a high speed and low power consumption when used in switching circuits.

The specific data is subject to PDF, and the above content is for reference

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