IRL3103LPBF Allicdata Electronics
Allicdata Part #:

IRL3103LPBF-ND

Manufacturer Part#:

IRL3103LPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 64A TO-262
More Detail: N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-26...
DataSheet: IRL3103LPBF datasheetIRL3103LPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRL3103LPBF Application Field and Working Principle

The IRL3103LPBF is a high current, low on-resistance MOSFET that is commonly used in a variety of applications in the consumer, industrial, automotive, and lighting fields. The device is a single high-voltage, high-speed N-channel MOSFET, featuring the latest MOSFET technology for efficient power switching.

Physical Characteristics of IRL3103LPBF

The IRL3103LPBF is a Surface Mount (SMT) N-channel MOSFET that features an ultra-low on-resistance of 3.03 mΩ. It has a flat model profile, RDS(on) of 13.7 mΩ typical, and has a P (max) [W] of 22. The device also has a Vds max of 550 V, a Gate charge Qg of 9 nC, a Vgs of 20 V max and a source drain diode recovery time of 22 ns. It is available in a DPAK-3 package.

Applications of IRL3103LPBF

The IRL3103LPBF is designed for a wide variety of power switching applications. It can be used in consumer and industrial products such as air conditioners, refrigerators, lighting, and power supplies. It is also used in automotive applications such as power car starters, fuel pumps, and airbag systems. In addition, this device is a suitable replacement for n-channel power MOSFETs in existing applications, due to its low on-resistance and low gate charge.

Working Principle of IRL3103LPBF

IRL3103LPBF is a discrete MOSFET, which is used as a switch. The principle on which it works is simple. When a voltage difference is created across the Drain and Source terminals, the current flowing through them is normally ‘OFF’ in an open state. Whenever we wish to turn it ‘ON’, we apply a voltage (VGS) across Gate and Source. This voltage creates a channel between Source/Drain, in turn allowing the current to flow. This is achieved due to the capacitive nature of the MOSFET’s structure.

The IRL3103LPBF is capable of high power switching due to its low on-resistance and low gate charge. It has a low propagation delay, enabling faster switching time. Its lower power dissipation further reduces the overall heat load. These features make the IRL3103LPBF a very efficient and reliable device to use in power switching applications.

Conclusion

The IRL3103LPBF is a high current, low on-resistance MOSFET that is ideal for a wide range of power switching applications, including consumer, industrial, automotive and lighting applications. The device has an RDS(on) of 13.7 mΩ typical, a Vds max of 550 V, and a Gate charge Qg of 9 nC. It has a low on-resistance and low gate charge, enabling high power switching, as well as a low thermal footprint. With its fast switching times, the IRL3103LPBF is an efficient and reliable device for power switching.

The specific data is subject to PDF, and the above content is for reference

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