IRL3303PBF Allicdata Electronics
Allicdata Part #:

IRL3303PBF-ND

Manufacturer Part#:

IRL3303PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 38A TO-220AB
More Detail: N-Channel 30V 38A (Tc) 68W (Tc) Through Hole TO-22...
DataSheet: IRL3303PBF datasheetIRL3303PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRL3303PBF is an integrated circuit power MOSFET manufactured by Infineon Technologies AG, a German semiconductor manufacturer. It is a P-channel Power MOSFET that features both low on-resistance and fast switching speed. What makes it stand out compared to other P-channel power MOSFETs is its very low on-resistance of only 6.5 milliohm in its fully optmized load balancing connection. This low on-resistance makes it ideal for a wide range of applications including audio amplifiers, DC/DC converters, DC/AC converters, switching regulators and other high-power applications that require low on-resistance and fast switching speed.

The IRL3303PBF MOSFET is a single power MOSFET, meaning that it only has one channel. This channel is the P-type channel, which is used to turn the device on and off and control its circuitry. The device also has two drain-source connections, one for the input and one for the output, and a gate terminal for controlling the current flow through the device. The device is capable of operating at up to 30V and up to a maximum of 30A peak current.

The working principle of the IRL3303PBF MOSFET is based on the principle of the MOSFET, which is an insulated gate field effect transistor. The device is formed by forming a conducting channel between the source and drain of the MOSFET. When a voltage is applied to the gate terminal, it creates an electric field across the channel, which then causes a current to flow through the channel. This current is controlled by the gate voltage and its direction can be reversed by applying an opposite voltage to the gate terminal.

The IRL3303PBF power MOSFET is especially suited for use in applications such as switching power supplies, motor control, DC/DC converters, low side switches, relays, driver stages and high speed switching. The device is designed to operate at up to 30V and up to a maximum of 30A peak current. It is especially useful in high-power applications where low on-resistance and fast switching speed are important. The device is also suitable for use in high-frequency applications due to its fast switching speed.

In conclusion, the IRL3303PBF power MOSFET is an excellent choice for applications where low on-resistance and fast switching speed are required. It is a single power MOSFET with a low on-resistance of only 6.5 milliohm in its fully optimized load balancing connection. The device is capable of operating at up to 30V and up to a maximum of 30A peak current. The device is especially suited for use in applications such as switching power supplies, motor control, DC/DC converters, low side switches, relays, driver stages and high speed switching. The device is based on the principle of the MOSFET, which uses an insulated gate field effect transistor to control the current flow through the device.

The specific data is subject to PDF, and the above content is for reference

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