Allicdata Part #: | IRL3715SPBF-ND |
Manufacturer Part#: |
IRL3715SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A D2PAK |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Surface... |
DataSheet: | IRL3715SPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL3715SPBF is an advanced N-channel, enhance mode vertical DMOS power Field Effect Transistor (FET). This product is designed with a low on-resistance and breakdown voltage of 16V and a current rating of 75A when operated at 25°C. It is widely used in high power switch mode applications such as 9V/10A and 12V/25A battery chargers, voltage converters and portable electronic systems. The device is qualified to AEC Q101 standard.
The IRL3715SPBF is built on a vertical DMOS structure which combines the regular and low on-resistance performance of the MOSFET structure with the high avalanche characteristics of a DMOS structure. This results in a power device with an on-resistance of only 65mΩ and an avalanche current of 250A. The advantage of using this device is that it can be operated at very high frequencies with a very low switching loss.
The working principle of IRL3715SPBF is based on the same principle of a normal MOSFET. When voltage is applied to the gate, it will in turn control the connection between the source and drain. The higher the voltage, the more conductive the path, making the MOSFET act as a switch. For IRL3715SPBF, the gate voltage can be adjusted up to 16V, providing great switching capability. In addition, the low on-resistance makes it very efficient in terms of power consumption compared to the traditional diode or BJT structures.
IRL3715SPBF is an ideal device for applications in many industries such as automotive, data processing, industrial control, metering and telecommunication. It is particularly popular in power switching applications due to its low on-resistance and high avalanche current. This device is also suitable for compact, computer based portable electronic systems like notebook computers, cell phones, etc. where space is limited.
To sum up, IRL3715SPBF is a high power, low on-resistance, enhance mode vertical DMOS power FET designed for high frequency applications. It is qualified to AEC Q101 standard, making it suitable for many applications in different industries. With its high current capability and low on-resistance, it is a superior power switch for battery chargers, voltage converters and portable electronic systems.
The specific data is subject to PDF, and the above content is for reference
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