| Allicdata Part #: | IRL3502SPBF-ND |
| Manufacturer Part#: |
IRL3502SPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 110A D2PAK |
| More Detail: | N-Channel 20V 110A (Tc) 140W (Tc) Surface Mount D2... |
| DataSheet: | IRL3502SPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 700mV @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 140W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 15V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 64A, 7V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 7V |
| Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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Today’s electronics are largely powered by integrated circuits. Over years, there have been a variety of different integrated circuit components developed for different applications. The IRL3502SPBF is one of the many transistors used for various applications depending on their working principles and the field of their application. Hence, it is important to have a better understanding of this component and its features.
The IRL3502SPBF is a single field-effect transistor (FET) or metal-oxide-silicon field-effect transistor (MOSFET). It operates in depletion mode and is made of a single silicon chip. It is a vertical double-diffused MOSFET (VDMOS) optimized for high breakdown voltage and suitable for switching devices, gate drives, audio and high frequency switching applications. The IRL3502SPBF offers excellent high temperature performance and high breakdown voltage ratings.
This power FET is mainly used in consumer electronics, computer, communications & security, automotive and industrial applications. Some of the key features of the IRL3502SPBF include low gate charge, high transconductance, and low threshold voltage. It also exhibits a fast switching speed and low on-resistance. The configuration of this device is N-Channel enhancement mode (EnMOS) with an embedded thermally-enhanced package.
The working principle of the IRL3502SPBF is quite basic and involves the application of a gate voltage to create a conductive channel in the middle of the device. This can be used to regulate the flow of current, making the FET extremely useful in switching devices and other applications. If the voltage applied to the gate is negative, then the channel is “off” and no current flows. However, if the gate voltage is increased, the channel opens and current is allowed to flow through the device.
The IRL3502SPBF is an excellent FET that is efficient, reliable and provides superior performance in a wide range of applications. This device offers a great deal of flexibility, allowing designers to customize their products and achieve better results. In addition to the basic operating principles and applications, the IRL3502SPBF also has several pin assignments depending on the application.
In conclusion, the IRL3502SPBF is a versatile field-effect transistor that is suitable for a wide variety of applications. Its high breakdown voltage ratings, low on-resistance, and fast switching speed make it an ideal choice for consumer electronics, computer, communications & security, automotive, and industrial applications. The device operates by applying a gate voltage to create a conductive channel, enabling the user to regulate current flow, while its embedded thermally-enhanced package helps to enhance performance.
The specific data is subject to PDF, and the above content is for reference
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IRL3502SPBF Datasheet/PDF