IRL3705ZLPBF Allicdata Electronics
Allicdata Part #:

IRL3705ZLPBF-ND

Manufacturer Part#:

IRL3705ZLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A TO-262
More Detail: N-Channel 55V 75A (Tc) 130W (Tc) Through Hole TO-2...
DataSheet: IRL3705ZLPBF datasheetIRL3705ZLPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRL3705ZLPBF is a Logic Level N-Channel Power MOSFET device manufactured by International Rectifier. It is specifically designed to minimize the on-resistance and gate charge of power MOSFET devices. This tailored approach to device design reduces cost and enables the creation of a design that best meets the requirements of the application.

The IRL3705ZLPBF can be used in a wide range of power conversion and gate driver applications, as well as voltage and current limiting functions. It has an operating temperature range of −55°C to +150°C and its maximum drain-source voltage (Vds) is 55V. It is a low-power and high-efficiency device that features a low on-resistance and gate charge, making it an ideal solution for many power management and control applications.

The IRL3705ZLPBF operates on a logic-level power MOSFET process, meaning that its gate threshold voltage is significantly lower than the gate source voltage of a regular MOSFET. This allows the device to be controlled using standard logic-level CMOS or TTL signals, instead of using the higher voltage signals required for regular MOSFETs. The low on-resistance allows the IRL3705ZLPBF to deliver a high level of performance in current control and other power management applications.

The IRL3705ZLPBF is a single Logic Level N-Channel Power MOSFET device. It works by operating in a low voltage, low power environment and is optimized for low on-resistance and gate charge. This device is designed to deliver high levels of performance in current control, power management and gate driver applications.

The key features of the IRL3705ZLPBF make it suitable for a wide range of applications, including circuit protection and current regulation, power management and control systems, motor control and variable speed drive circuits, switching power supplies, motor drivers and gate drivers, and high frequency power electronics. It is also suitable for use in numerous telecommunication products, such as switching regulators and high-speed power devices.

In conclusion, IRL3705ZLPBF is a low-power logic level N-Channel Power MOSFET device that is tailored for its specific application needs. It features a low on-resistance and gate charge, and its low threshold voltage makes it suitable for use with logic-level control signals. Its wide range of features makes the IRL3705ZLPBF suitable for a variety of power management and control systems.

The specific data is subject to PDF, and the above content is for reference

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