IRL3303SPBF Allicdata Electronics
Allicdata Part #:

IRL3303SPBF-ND

Manufacturer Part#:

IRL3303SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 38A D2PAK
More Detail: N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface...
DataSheet: IRL3303SPBF datasheetIRL3303SPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL3303SPBF is a Power MOSFET that is manufactured by International Rectifier. It is graded for applications for both commercial and military use. The MOSFET is based on a proprietary high voltage process, which enables superior switching performance, great figure of merit and improved cost efficiency. The device is available in a standard TO-220 or TO-263 package and has a drain current rating of 30 Amps and a drain-source voltage rating of 600 Volts. The IRL3303SPBF is a dedicated version of the IRL3303 and has been designed with superior logic-level voltage suppression characteristics.

The IRL3303SPBF Power MOSFET is designed to handle applications that involve a wide range of low power switch and amplifier stages. Its high performance features can help it to achieve excellent performance in a variety of challenging conditions. The device is suitable for use in a range of switching circuits, such as motor control, gate drive, inverters and other high power applications. It is also ideal for audio amplifier loads and switching applications involving high-fidelity audio amplifiers.

The IRL3303SPBF Power MOSFET uses a metal-oxide-semiconductor field-effect transistor (MOSFET) as its primary device. This type of device is an insulated-gate field-effect transistor (IGFET), which is a type of transistor that utilizes an electric field to control the conductivity of its channel. The MOSFET operates on the principle of modulating the channel between the drain and the source terminals. Applying either a positive or negative voltage to the gate electrode modulates the channel and allows current flow to occur.

The IRL3303SPBF Power MOSFET has superior switching characteristics and it is designed to provide fast switching operation and low conduction losses. The device also has a low gate-to-drain capacitance which helps to minimize input capacitance and improve overall switching performance. The wide range of features offered by the device makes it suitable for a wide range of applications, such as motor control, gate drive and inverters.

The IRL3303SPBF Power MOSFET has an enhanced thermal performance and it is designed to provide excellent thermal management. The device comes with an optimized thermally enhanced design which enables efficient heat transfer and improved thermal performance. The device also has a low operating voltage and it is suitable for use in applications that require low power consumption.

The IRL3303SPBF Power MOSFET has a wide range of applications and it is widely used in a variety of industries. It is used for drain current snubbing, boost circuits, relay drivers, logic level converters, synchronous rectifiers, master-slave hip-hop drives, level shifters and other applications. The IRL3303SPBF is suitable for use in a variety of automated control applications and it is also used in power switching applications such as in motor control and inverters.

The IRL3303SPBF Power MOSFET is designed to provide superior performance and it is widely used in a variety of applications. The device utilizes a metal-oxide-semiconductor field-effect transistor (MOSFET) to control the conduction of its channel and it is suitable for a wide range of applications. The device is designed to provide fast switching and low conduction losses and it has an optimized thermal performance and low operating voltage.

The specific data is subject to PDF, and the above content is for reference

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