IRL3502PBF Allicdata Electronics
Allicdata Part #:

IRL3502PBF-ND

Manufacturer Part#:

IRL3502PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 110A TO-220AB
More Detail: N-Channel 20V 110A (Tc) 140W (Tc) Through Hole TO-...
DataSheet: IRL3502PBF datasheetIRL3502PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL3502PBF is a step up in power MOSFETs. It is designed to be used as a power switch in a variety of applications, such as motor control, DC-DC conversion, and power distribution systems. It is also suitable for use in an array of consumer-based applications, such as computing, gaming consoles, networking, and PDAs.

The IRL3502PBF is made of a power MOSFET, with a high drain-source breakdown voltage and a low gate threshold voltage. It is available in both TO-220FP and SMD packages and is rated at 30V and 60A. This makes it ideal for applications that require high power handling and reliable switching performance.

The IRL3502PBF is an enhancement-mode MOSFET that operates in the linear region and is used for switching or linear applications. It has a source-drain breakdown voltage of 30V and an on-resistance of 0.04 ohms. This enables the device to handle high voltage and current loads, making it suitable for power switching applications.

The IRL3502PBF has an excellent thermal performance and can withstand a wide range of temperatures. It has a maximum drain current rating of 60A and a maximum junction temperature of 150°C. This ensures that the device operates reliably and without failure over a wide range of temperature conditions.

The IRL3502PBF is a voltage-controlled device and the gate-source voltage determines the silicon conductivity. The device features an electrostatic discharge (ESD) protection and an internal body-diode protection. This ensures that the device operates reliably even during an ESD event.

The IRL3502PBF has a high switching frequency and a low switching loss. This makes it suitable for high frequency applications such as motor control and power supplies. The power MOSFET also has excellent EMI performance, making it ideal for applications where electromagnetic compatibility is a priority.

The IRL3502PBF also has a low gate-source and gate-drain capacitance rating. This prevents the gate and source/drain of the device from being affected by high frequency noise. The low capacitance ratings also improve on-off switching performance.

In summary, the IRL3502PBF is an excellent power MOSFET for a variety of applications. It has an excellent thermal performance and can handle high voltage and current loads. It also has a low gate threshold voltage, excellent EMI performance, and low gate-source and gate-drain capacitance ratings, making it suitable for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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