| Allicdata Part #: | IRL3713STRLPBFTR-ND |
| Manufacturer Part#: |
IRL3713STRLPBF |
| Price: | $ 1.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 260A D2PAK |
| More Detail: | N-Channel 30V 260A (Tc) 330W (Tc) Surface Mount D2... |
| DataSheet: | IRL3713STRLPBF Datasheet/PDF |
| Quantity: | 2400 |
| 1 +: | $ 1.24000 |
| 10 +: | $ 1.20280 |
| 100 +: | $ 1.17800 |
| 1000 +: | $ 1.15320 |
| 10000 +: | $ 1.11600 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 330W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5890pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 38A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 260A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRL3713STRLPBF is a type of transistor used in many electrical applications. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed to perform a variety of functions in an electronic device. This type of transistor is a low power field effect transistor (LPFET) and is made from an insulating material that is surrounded by a gate.
The IRL3713STRLPBF can be used for a variety of applications, including current regulation, signal buffering, and switching. It is also commonly used in power supplies and other high-power applications. These transistors are capable of controlling the flow of current up to a certain level. They can be used in series to increase the amount of current that can pass through them. They are also used in high-speed circuits where they can reduce switching noise and reduce power consumption.
The working principle behind these transistors is fairly simple. When a voltage is applied to the gate, a channel is formed that allows current to flow through the transistor. The controlled amount of current depends on the voltage applied to the gate. If the voltage is higher, more current will pass through the transistor. If the voltage is lower, the amount of current that can pass through the transistor will be less than if the voltage was higher.
When using the IRL3713STRLPBF, it is important to note that when the transistor is in use, the gate voltage should be kept at a certain level and not allowed to drop too low. This can cause the transistor to breakdown which will reduce the amount of current that will pass through the transistor. Additionally, if the voltage is kept too high, it can cause damage to the transistor and cause it to malfunction.
The IRL3713STRLPBF is typically used in high-power applications due to its low power consumption and low resistance. The low power consumption is beneficial in applications where power consumption needs to be kept to a minimum. In addition, these transistors are typically more reliable than other types of transistors. They also have better high temperature performance and are able to operate at higher speeds.
Overall, the IRL3713STRLPBF is a versatile component that can be used in a variety of applications. It is also highly reliable and has excellent high temperature performance. This makes it an ideal choice for a variety of applications where a low power transistor is required. It is also capable of controlling current up to certain levels, and is capable of reducing switching noise and reducing power consumption. Therefore, it is often the preferred choice for use in high-power applications.
The specific data is subject to PDF, and the above content is for reference
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IRL3713STRLPBF Datasheet/PDF