Allicdata Part #: | IRL3714STR-ND |
Manufacturer Part#: |
IRL3714STR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A D2PAK |
More Detail: | N-Channel 20V 36A (Tc) 47W (Tc) Surface Mount D2PA... |
DataSheet: | IRL3714STR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 47W (Tc) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRL3714STR is a high-performance MOSFET that is designed to provide optimized performance in specific applications. The device features an integrated logic level gate, which is used to enable or disable the MOSFET\'s operation, minimizing power consumed during standby power modes. This device has an absolute maximum drain-to-source voltage rating of 60V and a maximum drain current rating of 12A. Furthermore, this MOSFET is in the package of PowerPAK® SO-8, making it an ideal choice for space-constrained designs.
The IRL3714STR is typically used in many applications such as for providing power supply routing, power management, load switching and output buffer management. It provides enhanced switching performance over traditional MOSFETs with lower on-resistance and low gate charge. Furthermore, it has superior temperature stability and low gate charge over temperature, ensuring reliable operation in high current, high temperature environments. Finally, this device is designed to meet the requirements of high-performance and high-temperature applications.
The IRL3714STR is a type of field-effect transistor (FET) that is used to control the flow of electrical current between two currents using a gate voltage. It is primarily used for switching and amplifying electrical signals. The FET has three terminals; the source terminal, the drain terminal and the gate terminal. The FET operates by applying a voltage to the gate which in turn creates an electric field to control the current passing through the other two terminals. Depending on the type of FET, either the voltage or current can be controlled or both.
The IRL3714STR is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) which is a FET that uses metal and an insulator as gate materials instead of the electric field applied in a traditional FET. This type of FET falls into the single FET category meaning that it consists of just a single semiconductor. It has three terminals; the source (S), the drain (D), and the gate (G). The gate is responsible for controlling the conduction between the source and the drain. By applying a voltage to the gate, the channel between the source and the drain can be opened or closed, allowing or restricting current to flow, respectively.
The IRL3714STR is a high-performance and high efficiency single MOSFET, designed for use in power management, load switching and output buffer management applications. It has a maximum gate-to-source voltage of -4V to 12V and drain-to-source voltage of -4V to 60V. It is able to handle maximum current rating of 16A for continuous current mode and 12A for pulsed current mode with an on-resistance of 8.2mΩ at 4.5V. Furthermore, this single MOSFET has temperature-compensated operation (from -55°C to 175°C) and improved gate charge over temperature.
The working principle of the IRL3714STR is based on the FET concept. By applying a voltage to the gate, an electric field is formed which in turn controls the conduction between the source and the drain. This electric field can be used to open or close the channel between the source and the drain, allowing or stopping the current to flow, respectively. This FET is specifically designed to provide optimized performance in the areas of power supply routing, power management, load switching and output buffer management.
In conclusion, the IRL3714STR is a single MOSFET that is designed for use in power management, load switching and output buffer management applications. It has a maximum drain-to-source voltage of 60V, a maximum drain current rating of 12A, and an on-resistance of 8.2mΩ at 4.5V. Its working principle is based on the FET concept where the gate voltage is used to control the conduction between the source and the drain. It provides enhanced switching performance over traditional MOSFETs with lower on-resistance and low gate charge, and provides reliable operation in high current, high temperature environments.
The specific data is subject to PDF, and the above content is for reference
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IRL3103L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 64A TO-26... |
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