IRL3714STRL Allicdata Electronics
Allicdata Part #:

IRL3714STRL-ND

Manufacturer Part#:

IRL3714STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 36A D2PAK
More Detail: N-Channel 20V 36A (Tc) 47W (Tc) Surface Mount D2PA...
DataSheet: IRL3714STRL datasheetIRL3714STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
FET Feature: --
Power Dissipation (Max): 47W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The IRL3714STRL is a single N-Channel enhancement mode Mosfet, consisting of a vertical DMOS transistor with an Etched Resistor. This transistor is commonly used as a general purpose device with various applications in different industries. It is suitable for switching applications with loads up to 50V and 10A, and it has a very low on-resistance to minimize losses. It also features a fast switching speed and an extremely high breakdown voltage.

The operation of the IRL3714STRL Mosfet is based on the Field Effect principle. As with any FET device, this Mosfet consists of three regions called the source, drain and gate. When the voltage of the gate terminal is raised above the threshold voltage, the depletion zone between the source and drain region is reduced which allows the current to flow from the source to the drain. This is known as the enhancement mode, where the flow of current is increased with a higher gate voltage.

The main application for the IRL3714STRL is as a single switch in power switching or DC-DC converters. This Mosfet can also be used as a differential amplifier with good linearity, and it is commonly used as power switches in switching power supplies. Furthermore, this device is used in various automotive applications such as line-switching circuits, switching regulators, and DC motor drives. It can also be used in industrial applications such as solenoid control, motor control, and battery chargers.

The IRL3714STRL Mosfet is an excellent choice for switching power diodes and is capable of operating within a wide range of voltages. It has an on-resistance at 10V gate voltage of 1.6 milliohms, and at 20V gate voltage it is 3.2 milliohms. The very low value of gate-drain capacitance allows excellent switching characteristics in both fast turn-on and turn-off conditions. The maximum rated junction temperature of the device is 175°C which allows for a wide range of ambient temperatures.

The IRL3714STRL is engineered to withstand substantial applied voltage and currents, making it suitable for most power supply designs. This device has a drain-to-source breakdown voltage of 160V and a maximum operating voltage of 80V. It is characterized by a maximum drain current of 10A and a maximum gate source voltage of +-20V. It has a thermal resistance of 276 K/W junction to case, and a low gate charge of only 8nC.

The IRL3714STRL Mosfet is a versatile device and it can be used in many different applications. It is stable over a wide range of temperatures, and its low on-resistance makes it suitable for low voltage power supplies as well as for high power losses. In addition, its low gate charge makes it well suited for switching power converters and motor control drives. The IRL3714STRL can also be used in transistors and switch networks, thanks to its fast switching capabilities.

The specific data is subject to PDF, and the above content is for reference

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