Allicdata Part #: | IRL3715ZL-ND |
Manufacturer Part#: |
IRL3715ZL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 50A TO-262 |
More Detail: | N-Channel 20V 50A (Tc) 45W (Tc) Through Hole TO-26... |
DataSheet: | IRL3715ZL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL3715ZL is an advanced n-channel MOSFET technology specifically developed to implicate the best combination of low on-resistance, ruggedness, and fast switching capability, making it perfect for use in consumer electronics and industrial equipment.
The IRL3715ZL has been developed as an enhancement mode, common source MOSFET device for applications such as power management and voltage regulation for a variety of consumer electronics devices. The IRL3715ZL features a low on-resistance of 88 mΩ typical, an extremely low threshold voltage of <3V, an enhanced ruggedness to protect against system level transients and a fast switching response time.
IRL3715ZL is a single featured technology that makes it suitable for high current switching and high frequency switching applications. This technology has a typical drain-to-source saturation voltage of 0.1 V, making it ideal for applications that require low power dissipation. The IRL3715ZL also features a maximum channel temperature rating of 175° C, which provides extended reliability during prolonged operation.
The IRL3715ZL has a wide operating temperature range of -55° C to 175° C and is rated to sustain a maximum peak drain-source voltage of 30V. It is available in a standard, TO-262 package that makes it ideal for high current and tight layout applications. The IRL3715ZL MOSFET also features an extremely low body diode reverse recovery time of 1.5ns, making it ideal for high speed switching applications.
The IRL3715ZL MOSFET device is typically used in industrial and military applications as it has been specifically designed for high reliability, high voltage, high power dissipation and low switching losses. These applications include but are not limited to, high temperature DC-DC converters, power MOSFETs and IGBTs. The device is often used to switch DC motors and solenoids as well as providing load sharing and hot-swapping capabilities.
The IRL3715ZL is an enhancement mode, n-channel MOSFET. It works by obtaining electrons from the source on one side, and transferring them to the drain on the other side. This action results in current flow between the two terminals and a voltage drop across the body. The IRL3715ZL exhibits an extremely low on-resistance due to its deeply etched geometry and extra thick field oxide back gate. The extra long-channel length also helps to reduce gate to source voltage, resulting in lower gate charge and switching losses.
The IRL3715ZL is designed to offer high reliability and perform high current switching duties with minimal power dissipation. Its features make it suitable for a variety of high current applications in the industrial and military sectors. The IRL3715ZL has a wide operating temperature range, making it suitable for high temperature and demanding applications.
The specific data is subject to PDF, and the above content is for reference
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