IRL3716SPBF Allicdata Electronics
Allicdata Part #:

IRL3716SPBF-ND

Manufacturer Part#:

IRL3716SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 180A D2PAK
More Detail: N-Channel 20V 180A (Tc) 210W (Tc) Surface Mount D2...
DataSheet: IRL3716SPBF datasheetIRL3716SPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 210W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL3716SPBF field-effect transistor (FET) is a single-polarity, switching MOSFET (Metal-Oxide Semiconductor FET) suitable for power switching applications such as in lighting, automotive, and power supplies. IRL3716SPBF is a logic level FET, making it an ideal solution for customers looking to improve performance in an application that requires a higher voltage MOSFET.

The IRL3716SPBF features low on-resistance, fast switching times, an integrated body diode, high-side RDS(on) and high blocking voltage up to 100V.

This FET offers great performance, without taking up too much board space. It is offered in the industry standard TO-220 package, with the option of a larger SO-8 package, if more power handling is required.

IRL3716SPBF Application Fields

Due to its low on-resistance and fast switching times, the IRL3716SPBF is ideal for many applications requiring power switching. The FET can be used as either a power switch or an output buffer.

The IRL3716SPBF has a wide range of applications in lighting, automotive, and power supplies, as well as in consumer electronics, such as white goods, PCs, LCD TVs, and even cell phones. The low on-resistance makes it especially suitable for power switching applications that require higher performance than the standard MOSFET.

For automotive applications, the IRL3716SPBF is used in fuel injection systems and as a load switch for controlling starter motors, solenoids, and other electronic power devices. In power supplies, it is often used as a main switch for ATX power supplies, as well as in POLs, battery charger circuits, and AC/DC converters.

IRL3716SPBF Working Principle

The IRL3716SPBF is a single-polarity MOSFET, meaning that current can only flow in one direction across it. It is a power MOSFET, and must be driven with the appropriate gate driver circuit, which can be either a single-ended or a push-pull voltage source. The gate voltage is then regulated to keep it within the specified operating limits. In addition, the gate voltage must be clamped, as the voltage applied to it must not exceed the maximum value, otherwise the FET will be damaged.

The IRL3716SPBF also features an integrated body diode, which provides protection against current reverse flow across the FET. The body diode has a low forward voltage drop, which helps to minimize power losses. In addition, the diode has a fast and smooth recovery time, which makes it suitable for fast switching applications.

The IRL3716SPBF also features a high blocking voltage of up to 100V, making it ideal for applications that require very high blocking voltages, such as most AC/DC converters and automotive applications. In addition, it has a low on-resistance of 3.2Ω, making it very efficient in power switching applications.

The IRL3716SPBF offers a wide range of features, making it an excellent choice for a variety of applications. Its low on-resistance, fast switching times, integrated body diode, and high blocking voltage make it one of the most reliable and efficient FETs on the market.

The specific data is subject to PDF, and the above content is for reference

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