IRL3803LPBF Allicdata Electronics
Allicdata Part #:

IRL3803LPBF-ND

Manufacturer Part#:

IRL3803LPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 140A TO-262
More Detail: N-Channel 30V 140A (Tc) 3.8W (Ta), 200W (Tc) Throu...
DataSheet: IRL3803LPBF datasheetIRL3803LPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRL3803LPBF is a logic level N-channel MOSFET that can be used in a wide range of applications. It\'s designed for use in low voltage and low-current applications, and is particularly well-suited for use in motor control and DC load switching applications, as well as for load paralleling. With its low-on resistance and fast switching time, it can also be used in high-current, high-frequency applications.

The IRL3803LPBF has a single N-channel, logic level design, which means that it can be easily controlled with low voltage signals. This feature also makes it suitable for use with low-voltage logic circuits, such as microcontrollers. The device also has a low on-resistance, which helps to reduce power dissipation in the system and increases the efficiency of the circuit.

The IRL3803LPBF also has a variety of features that make it suitable for a range of applications. It has an integrated body-drain diode, which helps to reduce switching losses, and a surge current capability which enables it to handle high inrush currents. It also has a low-capacitance structure and integrated gate protection, which helps protect against ESD damage and reduces gate charging time.

The working principle of the IRL3803LPBF is based on the principle of a MOSFET. A MOSFET is a type of field-effect transistor, which is a type of semiconductor that works by using the field effect. In a MOSFET, an electric field is applied to a gate which controls the current flowing through a channel between the source and the drain. When the gate voltage is sufficiently high, the channel is opened, allowing current to flow. Conversely, when the gate voltage is sufficiently low, the channel is closed, preventing current from flowing.

The IRL3803LPBF is a very versatile device, which makes it well-suited for a variety of applications. It can be used in motor control applications and DC load switching, as well as in signal processing circuits and ultrasonic and audio applications. It is also suitable for use in load paralleling and in high-current, high-frequency applications.

The device is also very reliable, thanks to its low on-resistance and integrated gate protection. This makes it ideal for use in high-reliability applications, where operational reliability and safety are essential. Additionally, its low-cost makes it an attractive option for a wide range of applications.

In summary, the IRL3803LPBF is an excellent choice for a wide range of applications. Its low-on resistance, integrated body-drain diode, surge current capability, low-capacitance structure and integrated gate protection make it ideal for use in motor control, DC load switching, signal processing, ultrasonic, audio, load paralleling and high- current, high-frequency applications. Additionally, its low-cost and operational reliability make it an excellent choice for any application where operational reliability and safety are essential.

The specific data is subject to PDF, and the above content is for reference

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