IRL510PBF Allicdata Electronics
Allicdata Part #:

IRL510PBF-ND

Manufacturer Part#:

IRL510PBF

Price: $ 1.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 5.6A TO-220AB
More Detail: N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-...
DataSheet: IRL510PBF datasheetIRL510PBF Datasheet/PDF
Quantity: 1858
1 +: $ 1.09000
10 +: $ 1.05730
100 +: $ 1.03550
1000 +: $ 1.01370
10000 +: $ 0.98100
Stock 1858Can Ship Immediately
$ 1.09
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The Infineon IRL510PBF is a vertical P-Channel MOSFET integrated circuit used for a wide variety of applications, including power control, power supply design and power conversion. In this article, we will look at the application fields and working principles of the IRL510PBF.

Application Fields

The IRL510PBF is primarily used in high-speed switching applications. This MOSFET is well suited for applications that require fast switching times, such as high-frequency switching power supplies and class-D audio amplifiers. The low drain-source on-resistance of this MOSFET makes it ideal for switching applications that require high speed and low power dissipation. Additionally, the IRL510PBF is also suitable for applications that require low-side power control, such as motor driving, lighting control and battery charging.

The IRL510PBF is also well suited for high-current switching applications, such as server and telecom power supplies, automotive power systems and lighting applications. The integrated circuit is rated for up to 500V and 25A, which makes it suitable for driving higher power loads with ease.

Working Principle

The IRL510PBF is a vertical power MOSFET, which means the MOSFET is formed by vertically stacking multiple layers of metal oxide semiconductor (MOS) material together, forming a vertical power structure. This vertically stacked structure has the advantage of providing a high current capacity in a relatively small size. The metal oxide semiconductor (MOS) material allows electric current to flow between the source and the drain in one direction only, which makes the IRL510PBF ideal for power control applications, as well as low-frequency switching applications.

The IRL510PBF has a maximum drain-source voltage rating of 500V and a maximum drain current rating of 25A. The integrated circuit features a low on-resistance of 0.3 ohms at 10V and low gate-source voltage threshold (VGS) of 1.8V, which provides for fast switching times, as well as high efficiency. The package of the IRL510PBF comes in a 8-pin VSO package, which makes it a compact solution for embedded applications.

The IRL510PBF is pin-compatible with the IRFPN50, which is a vertical N-channel MOSFET, and can be used as a cost-effective solution for high-current switching applications. Additionally, the IRL510PBF features built-in protection against Electrostatic Discharge (ESD) and Enhanced Avalanche (Avalanche Energy). This makes the IRL510PBF an ideal solution for applications that require ESD and Avalanche energy protection.

In conclusion, the Infineon IRL510PBF is a vertical P-Channel MOSFET integrated circuit that is well suited for applications requiring fast switching as well as high-current switching. This MOSFET features high breakdown voltage rating, low on-resistance and low gate-source voltage threshold, making it ideal for use in high-speed switching, power control, power supply design and power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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