IRL520NL Allicdata Electronics
Allicdata Part #:

IRL520NL-ND

Manufacturer Part#:

IRL520NL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 10A TO-262
More Detail: N-Channel 100V 10A (Tc) 3.8W (Ta), 48W (Tc) Throug...
DataSheet: IRL520NL datasheetIRL520NL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRL520NL Application Field and Working Principle

IRL520NL is a power field effect transistor (FET) that is part of the International Rectifier company\'s long standing lineup of products. It is designed to handle a wide range of power applications, including power switching and linear operation. As a single-gate MOSFET, the IRL520NL is optimized for low power dissipation, making it an ideal choice for those looking for a device with a low total cost of ownership.

The IRL520NL FET is a high-performance device with a low on-resistance rating of 0.0505 ohm. It is capable of handling 9A of continuous current, making it suitable for applications such as high-power switching, pulse-width modulation, and motor control. Additionally, the device has a maximum drain-source breakdown voltage of 55V, making it suitable for use with common power supply voltages. It also has low gate charge and a double-pulse transient endurance rating of 2A, making it a great choice for high-speed applications.

The IRL520NL FET is constructed using the advanced Field Stop Trench integrated circuit process, which provides superior performance over conventional MOSFETs. This process gives the device an exceptionally low on-resistance, low capacitance, low-turn-on voltage, low leak current, and improved switching characteristics. The IRL520NL truly excels in its power-switching capabilities, providing superior performance in high-current, high-voltage applications.

The IRL520NL is a very versatile device with a wide range of applications, from audio amplifiers and power conditioners to industrial motor speed control and robotics. It can also be used in power factor correction and ballast circuitry for lighting applications, as well as in DC-DC converters, high-voltage power supplies, and other power management applications.

The IRL520NL’s primary use is in power switching applications. It is an N-channel FET, which means that the gate voltage controls the flow of the current between the drain and the source. This allows for more efficient control of the current between the drain and the source, resulting in less power loss and better overall efficiency. The IRL520NL is capable of fast switching times, with a maximum turn-on time of 250 nS and a turn-off time of about 375 nS.

In summary, the IRL520NL is a versatile, high-performance N-channel MOSFET that is ideally suited for many power-switching applications. It is a cost-effective device with a low on-resistance rating and a maximum drain-source breakdown voltage of 55V, making it an attractive choice for many applications. It also has low gate charge and a double-pulse transient endurance rating of 2A, making it an ideal choice for high-speed applications. With its ability to handle up to 9A of continuous current, the IRL520NL is a great choice for those looking to save cost while still achieving the performance they need.

The specific data is subject to PDF, and the above content is for reference

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