IRL540S Allicdata Electronics
Allicdata Part #:

IRL540S-ND

Manufacturer Part#:

IRL540S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 28A D2PAK
More Detail: N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surfa...
DataSheet: IRL540S datasheetIRL540S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL540S is a voltage-driven, vertical double-diffused metal oxide semiconductor field effect transistor (MOSFET) with an integral body diode. This component belongs to the family of single MOSFETs, which are electronic components which make use of transistors, specifically field effect transistors (FETs). While this component has been around since the early 2000s, it is still used in industrial, wireless, and consumer electronics applications.The IRL540S transistor is equipped with a wide variety of features and performance characteristics that make it ideal for its various applications. It utilizes a discrete structure, with its source and drain areas on the same semiconductor material (Silicon). The gate area is insulated from the source and drain using a thin gate oxide, which also functions to determine the transistor’s on-state resistance and its gate-source voltage when switched on.The IRL540S can be used in both high-side and low-side switching applications. It can be used for DC/DC converters, motor drives, power supplies, and digital logic applications. The component can also be used in high frequency switching applications, such as radio frequency (RF) power amplification.In terms of its basic working principle, the IRL540S is designed to be used as a switch. It is driven by a voltage signal, and when voltage is applied to the gate area, it causes the transistors to switch on, allowing current to flow through the system. This is what controls the current flow to different devices, including motors and other electronic components. The gate voltage determines the voltage of the device as it is being driven.When using the IRL540S, the source is connected to the ground, while the drain is connected to the load, and the gate is connected to the voltage signal. When voltage is applied to the gate, the gate-oxide-source junction (GOS) will break down and allow current to flow from the source to the drain. This process is known as the absorption of energy. The breakdown voltage of the junction will depend on the amount of voltage applied, making it suitable for use with different voltage ranges.The IRL540S transistor is also able to handle high power applications, as its design allows for low on-state resistance and a low gate charge. This makes it suitable for applications that require high power, such as motor drives and digital logic circuits. It also features a low reverse transfer capacitance, which is helpful in applications that need low power control.In summary, the IRL540S is an extremely versatile component due to its wide range of features, performance characteristics, and applications. It is a mature technology, and has been used for almost two decades in industrial, wireless, and consumer electronics applications. Its capability to handle high power makes it suitable for various different types of applications. The IRL540S is a perfect example of a single transistor MOSFET that can be used in all kinds of applications.

The specific data is subject to PDF, and the above content is for reference

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