Allicdata Part #: | IRL520S-ND |
Manufacturer Part#: |
IRL520S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 9.2A D2PAK |
More Detail: | N-Channel 100V 9.2A (Tc) 3.7W (Ta), 60W (Tc) Surfa... |
DataSheet: | IRL520S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 5.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 9.2A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL520S is a single N-channel MOSFET typically found in voltage regulator modules and in low voltage circuits, such as low noise amplifiers, RF, and switching applications. This device is fully capable of operating in any type of voltage, from 5 volts to 25 volts and also with an excellent performance in power controlling applications. It is an ideal solution for these type of applications due to its very low On-Resistance and Very low Total Gate Charge QG. Due to its popular nature, it is available in the market in the smallest package size.
Working Principle
The working principle of the IRL520S can be broken down into two basic parts; its operation and its structure. On the operation side, the device functions as a voltage controlled device, meaning that the amount of current flowing through it is determined by the voltage applied to its Drain terminal. The higher the voltage, the greater the current that passes through the device. On the structural side, the device consists of a source connection, a drain connection, a gate connection and a dielectric layer which separates the gate and the source. The gate connection controls the flow of current through the device, while the source and the drain control the amount of current that can pass through. The dielectric layer is key in determining the on-resistance of the device, which is a measure of the device\'s efficiency and its ability to transfer power.
Application Field
The IRL520S is suitable for a wide array of applications. These include, but are not limited to, high frequency switching applications, low noise amplifiers, voltage regulators, rectification converters, battery management, flyback converters, dual power supplies, pulse width modulation, and circuit protection. In particular, this device is often used for low voltage circuits, as it is highly efficient in the power controlling applications and can handle the highest voltages without much difficulty.
Furthermore, the device is designed to handle some of the most demanding applications. It is very reliable in harsh environments, like high temperature, as it is rated to operate up to 175°C. Moreover, the device has a very low total gate charge and capacitance, allowing it to work at extremely high frequencies, up to 500MHz. Lastly, it is designed to handle high power loads. Thanks to its low on-resistance, the device is capable of delivering up to 50A of current, making it perfect for high power switching applications.
Overall, the IRL520S is an excellent device for a wide variety of applications. By combining its efficient operation, reliable construction and high current handling capacity, this device is the ideal choice for a number of different solutions, from low noise amplifiers to high power switching applications.
The specific data is subject to PDF, and the above content is for reference
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