Allicdata Part #: | IRL5602STRL-ND |
Manufacturer Part#: |
IRL5602STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 24A D2PAK |
More Detail: | P-Channel 20V 24A (Tc) 75W (Tc) Surface Mount D2PA... |
DataSheet: | IRL5602STRL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 12A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL5602STRL is a high-performance n-channel MOSFET device that is used for various power management applications. The device has an integrated low-RDS(on) that makes it suitable for high-frequency application in the industry. It can also be used in a wide range of temperature range and can handle large load currents due to its low gate charge and low internal capacitance.
The IRL5602STRL is an ideal device for power sequencing applications due to its fast switching speed and high-frequency operation capability. It is also suitable for synchronous rectification, variable-speed motor drives, high-speed load switching, and load management. The switching speed of the device is suitable for working with switching converters, DC-DC converters, and pulse-width or frequency modulated (PWM/FM) switching power supply designs. Additionally, the device is well suited for end-product applications such as set-top boxes, personal computers, LCD monitors, and notebook computers.
The IRL5602STRL device has a maximum drain-source blocking voltage of 100V with a maximum drain current of 52A at 25°C ambient temperature. The device offers a drain-source breakdown voltage of 160V along with gate-source reverse-biased breakdown voltage of 20V. The low gate-threshold voltage of 2.5V makes the device suitable for low-power management applications such as processor power supplies. The device is also capable of withstanding up to a maximum peak inrush current of 100A due to its high blocking voltage.
The working principle of the IRL5602STRL is mostly based on the n-channel MOSFET designs. It is composed of a die of n-type material with a metal gate. The gate voltage is used to control the electrons on the channel. When the gate voltage is increased, enough electrons are attracted to the gate in order to make the channel more conductive. This increase in channel conduction can be used to control the flow of current across the device. The drain-source current is controlled by the gate-source voltage and the channel conductivity.
The IRL5602STRL has a number of features that make it suitable for use in different applications. Its fast switching speed and low on-resistance make it an appropriate device to use in high-frequency, high-current applications. Additionally, its low gate-source voltage, low gate charge, and low internal capacitance help keep the device’s power consumption low. Its high drain-source current carrying capacity makes it an ideal choice for applications requiring both continuous and pulsed loads
In conclusion, the IRL5602STRL is a high-performance n-channel MOSFET device that is used for various power management applications. Its fast switching speed and low on-resistance make it a great device for power sequencing, as well as for end-product applications such as set-top boxes, personal computers, LCD monitors, and notebook computers. Additionally, its low gate-source voltage, low gate charge, and low internal capacitance allow the device to keep its power consumption and total cost down, making it a great device for cost-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRL5602STRLPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 24A D2PAK... |
IRL530A | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 14A TO-2... |
IRL540A | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A TO-2... |
IRL540SPBF | Vishay Silic... | -- | 248 | MOSFET N-CH 100V 28A D2PA... |
IRL530 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 15A TO-2... |
IRL540 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 28A TO-2... |
IRL520 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 9.2A TO-... |
IRL510 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRL5602S | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 24A D2PAK... |
IRL520NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 10A D2PA... |
IRL520NSTRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A D2PA... |
IRL530NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 17A TO-2... |
IRL530NSTRL | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 17A D2PA... |
IRL530NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 17A D2PA... |
IRL530STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 15A D2PA... |
IRL540S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRL510S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRL520NL | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 10A TO-2... |
IRL540NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 36A TO-2... |
IRL540NSTRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 36A D2PA... |
IRL510A | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRL510L | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRL510STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRL510STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRL520L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A TO-... |
IRL520NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A D2PA... |
IRL520S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRL520STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRL520STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRL530L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 15A TO-2... |
IRL530S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 15A D2PA... |
IRL530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 15A D2PA... |
IRL540L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A TO-2... |
IRL540NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 36A D2PA... |
IRL540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRL540STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRL5602L | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 20V 24A TO-26... |
IRL5602 | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 24A TO-22... |
IRL5602STRL | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 24A D2PAK... |
IRL5602STRR | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 24A D2PAK... |
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