IRL540NSTRLPBF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	74nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	44 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRL540NSTRLPBF is an advanced power MOSFET designed by Infineon Technologies and manufactured by STMicroelectronics. It is an innovative type of field-effect transistor (FET) that consists of an insulated gate, a Metal-Oxide semiconductor (MOS), and a low-resistance body. It is a single-channel, logic level, N-type MOSFET which offers high performance and low-loss performance.The IRL540NSTRLPBF power MOSFET is commonly used in a variety of applications. It can be used for DC/AC switching such as motion control, solid state relays and PCB relays due to its high speed of switching. It can also be used for power conversion circuits and power switching needed in power supplies and batteries. In addition to power conversion, it can also be applied in motor control, signal inverters, and audio switching.In terms of its electrical characteristics, the IRL540NSTRLPBF has an impressive Drain Source Voltage rating of 55V, a Gate-Source Voltage rating of ±20V, a Drain-Source On Resistance rating of 1Ω, and a Gate Threshold Voltage rating of 2.7V. Furthermore, its current carrying capability is high with a maximum Drain Current rating of 5A.The working principle of the IRL540NSTRLPBF is based on the MOSFET structure,which is a three-terminal device. It consists of a gate, drain, and source. When a voltage is applied between the gate and the source, an electric field is created which modulates the conductivity of the channel formed between source and drain. This creates a resistance between them; the size of which is determined by the voltage applied across the gate. Increasing the voltage between a gate and a source increases the channel resistance, thereby reducing the current flow. The power MOSFET offers superior performance and reliability due to its non-linear output characteristics which can be tuned to provide different levels of output current as per the varying demand of the load. This results in enhanced performance in applications operating at rapidly changing conditions. It also has low on-state resistance due to its low-loss process which helps reduce power consumption into the circuit.Aside from its electrical capabilities, the robustness of the IRL540NSTRLPBF is also very impressive. It offers a high degree of thermal stability and superior dielectric properties. Furthermore, its high-speed switching capability and low insertion loss prevent it from getting hot during operation which helps improve its heat sink/dissipation requirements.The IRL540NSTRLPBF is an ideal choice for applications that require high power efficiency and low noise. It can be used for a variety of applications, such as motion control, solid state relays, power conversion circuits, and power switching. With its high speed of switching, low on-state resistance, and robust construction, the IRL540NSTRLPBF is highly versatile and reliable.

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