IRL540NSTRRPBF Allicdata Electronics
Allicdata Part #:

IRL540NSTRRPBF-ND

Manufacturer Part#:

IRL540NSTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 36A D2PAK
More Detail: N-Channel 100V 36A (Tc) 3.8W (Ta), 140W (Tc) Surfa...
DataSheet: IRL540NSTRRPBF datasheetIRL540NSTRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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An IRL540NSTRRPBF is a type of field-effect transistor, more commonly referred to as an FET, and even more specifically a MOSFET single. This type of transistor is considered a low-power, low voltage transistor that is made up of four distinct components. These are the source, drain, gate, and body. The source is the input of the transistor, while the drain is the output. The gate is the composed of a metal oxide and separates the source and the drain. The body is, in this context, the substrate or material between the source and the drain.

An IRL540NSTRRPBF can be used in any number of different applications, including switching, amplification, and other related components. These types of transistors are often used for a range of different computing or commercial aspects, such as motor control or power electronics control. This particular type of FET is also used in amplifiers and signal filtering applications, due to its low power, low voltage benefits.

In order for this type of transistor to work, it must be supplied with a certain type of gate voltage. This gate voltage will be provided to a specific gate terminal of the transistor, either through an external signal, an input signal, or an internal voltage source. This voltage supplies the perforation between the source and the drain, allowing an electric current to flow through it, which controls the signal that is sent out to the drain. Typically, the gate voltage can range anywhere from -2V to 25V.

The IRL540NSTRRPBF also has a maximum power dissipation of 1.3W, with a maximum drain-source voltage of 25V and a drain current range of 0.3A to 2A. This makes it an ideal choice for most applications that require a low-power, low voltage transistor.

Overall, the IRL540NSTRRPBF is an excellent choice for a range of different applications and is equally adept at its switching, signal filtering, and amplifier needs. This transistor is capable of operating on low voltages and current, due to its relatively low power dissipation, and has a wide range of gate voltages available for it to use. It is a reliable and cost-effective choice for a number of different applications.

The specific data is subject to PDF, and the above content is for reference

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