
Allicdata Part #: | IRL540NSTRRPBF-ND |
Manufacturer Part#: |
IRL540NSTRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 36A D2PAK |
More Detail: | N-Channel 100V 36A (Tc) 3.8W (Ta), 140W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Power Dissipation (Max): | 3.8W (Ta), 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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An IRL540NSTRRPBF is a type of field-effect transistor, more commonly referred to as an FET, and even more specifically a MOSFET single. This type of transistor is considered a low-power, low voltage transistor that is made up of four distinct components. These are the source, drain, gate, and body. The source is the input of the transistor, while the drain is the output. The gate is the composed of a metal oxide and separates the source and the drain. The body is, in this context, the substrate or material between the source and the drain.
An IRL540NSTRRPBF can be used in any number of different applications, including switching, amplification, and other related components. These types of transistors are often used for a range of different computing or commercial aspects, such as motor control or power electronics control. This particular type of FET is also used in amplifiers and signal filtering applications, due to its low power, low voltage benefits.
In order for this type of transistor to work, it must be supplied with a certain type of gate voltage. This gate voltage will be provided to a specific gate terminal of the transistor, either through an external signal, an input signal, or an internal voltage source. This voltage supplies the perforation between the source and the drain, allowing an electric current to flow through it, which controls the signal that is sent out to the drain. Typically, the gate voltage can range anywhere from -2V to 25V.
The IRL540NSTRRPBF also has a maximum power dissipation of 1.3W, with a maximum drain-source voltage of 25V and a drain current range of 0.3A to 2A. This makes it an ideal choice for most applications that require a low-power, low voltage transistor.
Overall, the IRL540NSTRRPBF is an excellent choice for a range of different applications and is equally adept at its switching, signal filtering, and amplifier needs. This transistor is capable of operating on low voltages and current, due to its relatively low power dissipation, and has a wide range of gate voltages available for it to use. It is a reliable and cost-effective choice for a number of different applications.
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IRL540NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 36A D2PA... |
IRL540STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
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