IRLML0100TRPBF

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The IRLML0100TRPBF is a single enhancement-mode, low-side, N-channel MOSFET with a maximum drain-source voltage (Vds) of 30V and a drain current (Ids) of 100mA. It is manufactured by International Rectifier and is housed in a space-saving the SOT-23 Power 3-Pin Surface-Mount Package. This MOSFET is primarily used in a variety of applications such as automotive due to its flexible capabilities.
Application Field
The IRLML0100TRPBF MOSFET has many applications in automotive, such as motor control, PWM power, driving load, and lighting circuits. Additionally, it is useful in many other applications due to its notable low on-resistance, allowing it to be used as an ideal switch with fast and efficient switching capabilities. It can also be used in high-side configuration, allowing the user to interface the MOSFET to a wide variety of control signals and high gate drive voltages.
This MOSFET is suitable in applications that require low on-resistance combined with a wide operating voltage range, high switching speed and low gate threshold. It also allows for reduced power consumption and improved system efficiency. Moreover, this device is renowned for its low thermal resistance, making it suitable for applications that require a high level of efficiency and low power dissipation.
The IRLML0100TRPBF is capable of operating over a wide range of voltages, which is perhaps its most integral feature. This allows for greater versatility in its application, with designs ranging from those that require only basic low-power operation to those that require the highest power operating points. Additionally, since the device has an operating voltage range spanning from -1V to +30V, it can be easily adapted to meet the needs of any particular circuit design.
Working Principle
Due to its low on-resistance, this MOSFET can act as a switch, allowing current to flow through its drain (D) and source (S) pins when Vgs is greater than the device threshold voltage. It is basically an N-channel MOSFET with a body-diode acting as a reverse-polarity protection device. When a positive voltage is applied to the gate (G) pin, the internal electric field is enhanced and electrons are attracted from the N-region to the P-region, thus allowing conduction between source and drain pins. This device can provide a fast switching action, reducing power losses for improved system efficiency and minimizing undesirable heat dissipation.
When utilizing this MOSFET in the low-side configuration, the high-side switch (which is located between the state device and the load) is used to activate the MOSFET by providing a gate-source voltage (Vgs) greater than the threshold voltage. With this type of configuration, the MOSFET will remain in the off state when Vgs is less than the threshold voltage, as illustrated below:

This MOSFET can also be used in the high-side configuration, in which the gate voltage is applied to the source terminal and the lower voltage is applied to the drain pin. In this type of configuration, the body diode must be accounted for due to the inherent diode between the drain and source pins, which can cause problems in some applications if not taken into consideration.
In summary, the IRLML0100TRPBF is a single enhancement-mode, low-side, N-channel MOSFET mainly used in automotive applications due to its various features, such as its low on-resistance, wide operating voltage range, high switching speed, low gate threshold, and its ability to be used in either high-side or low-side configuration. Even though this device’s power dissipation is low, it still requires adequate heat sinking, otherwise, it can cause the device to fail.

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