Allicdata Part #: | IRLU120PBF-ND |
Manufacturer Part#: |
IRLU120PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 7.7A I-PAK |
More Detail: | N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Throu... |
DataSheet: | IRLU120PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 4.6A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU120PBF is a logic level power MOSFET that is suitable for high frequency and high efficiency power conversion applications. It is an N-Channel enhancement mode MOSFET that is designed for operation in the VDGR range of 4.5V to 14V and the ID 250mA. It consists of a P-Type drain and an N-Type source with a high voltage gate region, which allows for fast switching operation.
This MOSFET has extremely low resistance (RDS(on) = 0.0033 Ω)and can withstand very high voltage pulses (up to VGS = ± 25V). This makes it suitable for applications requiring extremely low on-state resistance with no degradation of performance due to high voltage transients and allows for very high efficiency power conversion.
The IRLU120PBF can be used in motor control circuits, speed control circuits and power management systems, as well as DC-DC converters, Class-D audio amplifiers and AC-DC converters. It is also suitable for automotive applications due to its wide operating temperature range of -55°C to 175°C.
When a positive voltage is applied to the gate, electrons are drawn to the gate, inducing an electric field that depletes the N-Type source. This in turn reduces the resistance of the channel and the MOSFET is switched on, allowing current to flow between the source and the drain. By reversing the process, the electric field can be reversed and the MOSFET switched off.
This MOSFET has several features that make it ideal for applications requiring fast transitions and high efficiency, such as its low drain inductance (<300nH) and fast switching time (1.7ns typical trr). Additionally, it has a very low input capacitance (Ciss = 50pF) and output capacitance (Coss = 8.0pF) which reduces system cost as well as improving efficiency. Additionally, the IRLU120PBF has a low gate threshold voltage (Vth 2V) which allows for easy turn-on and an ultra-low figure of merit (FOM=2.7Ω·μs) which is ideal for high frequency applications.
Overall, the IRLU120PBF is an ideal choice for high frequency, high efficiency power conversion applications due to its very low resistance, wide operating voltage range, high voltage tolerance and fast switching time. Its low drain inductance, low input and output capacitances and low turn-on voltage also make it particularly suitable for automotive, Class-D audio and DC-DC applications.
The specific data is subject to PDF, and the above content is for reference
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