Allicdata Part #: | IRLU3717PBF-ND |
Manufacturer Part#: |
IRLU3717PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 120A I-PAK |
More Detail: | N-Channel 20V 120A (Tc) 89W (Tc) Through Hole I-PA... |
DataSheet: | IRLU3717PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2830pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 89W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU3717PBF is a Power MOSFET from Infineon Technologies, commonly used in many different applications. It is commonly used in the high-voltage, high-current applications, making it an ideal solution for a wide range of commercial, industrial and automotive applications. This article will look at the application fields and working principle of the IRLU3717PBF.
The IRLU3717PBF is a high-voltage and high-current, N-Channel Mosfet. It is a clamshell package, and has a dielectric strength greater than 7 kilovolts. The IRLU3717PBF is also capable of operating at an overall junction temperature of up to 175oC. The device is also ELCAP-certified, meaning that it meets all the requirements of the European Low-Voltage Directive.
The IRLU3717PBF is typically used in power MOSFET applications including DC Motor Drives, Battery Chargers, Automotive Electronics, and Computer Peripherals. The device is also often used in high power switching applications, as its low on-resistance and high-voltage capability make it well-suited for such applications. The IRLuj3717PBF is also able to withstand high surge currents, making it suitable for use in power supply and protection circuits.
The working principle of the IRLU3717PBF is based on the field-effect transistor (FET) technology. The IRLU3717PBF is a N-channel Mosfet, which means that it relies on an electric field to control the conduction of electrons through its gate. The gate of the IRLU3717PBF is insulated from its surface by an oxide layer, so when a voltage is applied to the gate, it creates an electric field which can control the conduction of electrons either in the channel or between source and drain.
The IRLU3717PBF also features intrinsic body diode protection, which acts as a safety device in case of a short circuit. The body diode will be reverse-biased when the Mosfet is off, effectively preventing current from flowing in the wrong direction and damaging the device. In addition, the device also has a built-in temperature protection which prevents the device from exceeding its predetermined maximum temperature.
In conclusion, the IRLU3717PBF is an N-channel Power MOSFET, commonly used in high-voltage and high-current applications such as DC motor drives, battery chargers, automotive electronics, and computer peripherals. The device is based on the field-effect transistor technology, and features intrinsic body diode protection and temperature protection to ensure its safe operation in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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