IRLU120NPBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	48W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	440pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	185 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRLU120NPBF Application Field and Working Principle

IRLU120NPBF is a type of N-channel Field-Effect Transistor (FET) manufactured by International Rectifier Corporation. It is categorized as a single-FET device and is used in a wide range of different applications. The device primarily functions as an efficient switch for controlling current but can also be used for signal amplification and voltage control. This article will provide an overview of the IRLU120NPBF\'s application field and working principle.

Application Field of IRLU120NPBF

The IRLU120NPBF is a general-purpose FET and it can be used in a variety of different applications. One of the most common uses of this FET is as a switch. It can be used for DC to AC power conversion in inverters and other power conversion applications. By using this device as a high-speed switch, it is possible to reduce power losses and improve efficiency significantly. The IRLU120NPBF can be used in low voltage logic applications. Its low on-state resistance makes it an ideal choice for these applications. The device has a low threshold voltage and can be used to control the output voltage in various systems. It can also be used in linear voltage regulators to reduce current ripple and improve switching times. The device also has applications in amplifiers and motor drivers. It can be used to control the current in motor drivers, allowing for precise and efficient operation. The device also has a fast switching speed, making it suitable for high-speed amplifier systems.

Working Principle of IRLU120NPBF

The IRLU120NPBF is a N-channel Field-Effect Transistor (FET). It has a source, drain, and gate, which are used to control the flow of current through the device. This device works by allowing a small control voltage to be applied to the gate, which in turn causes the transistor to turn on and allow a current to flow from the source to the drain. When the transistors are off, the gate-to-source voltage is equal to the drain-to-source voltage. This is known as the "cut-off region". In this state, no current flows through the transistor. When the gate voltage is increased, the transistor moves into the "saturation region". This is the state where the transistor is turned on and current is allowed to flow through. The amount of current that can flow through the transistor is limited by the drain-to-source voltage and the gate-to-source voltage. When the gate voltage is decreased, the transistor moves back into the "cut-off region" and the current flow is stopped. This process is repeated to control the current flow through the transistor and can be used to control the output of a system.

Conclusion

The IRLU120NPBF is a general-purpose FET manufactured by International Rectifier Corporation. It is an efficient device and has a wide range of applications, including switching, voltage control, and signal amplification. Its low on-state resistance makes it an ideal choice for low voltage logic applications, while its fast switching speed makes it suitable for high speed amplifier systems. The device works by applying a small control voltage to the gate, which in turn causes the transistor to turn on and allow a current to flow from the source to the drain.

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