Allicdata Part #: | IRLU9343-ND |
Manufacturer Part#: |
IRLU9343 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 20A I-PAK |
More Detail: | P-Channel 55V 20A (Tc) 79W (Tc) Through Hole I-PAK |
DataSheet: | IRLU9343 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU9343 is a single-channel, low-power, high-efficiency, N-channel power MOSFET with fully balanced Gate, Source, and Drain. It is designed for switching applications, such as motor drivers and power supplies.
The IRLU9343 is designed for low-current, low-power operations, making it ideal for battery-powered systems, as well as high-efficiency applications needing low on-resistance and low gate drive requirements. It is also characterized for very low input capacitance, which can reduce switching losses and improve noise immunity. Due to its low gate charge, the IRLU9343 achieves fast switching times, making it suitable for high-current, high-speed applications.
The n-channel enhancement mode field-effect transistor (FET), such as the IRLU9343, is a three-terminal voltage-controlled semiconductor device that has the capacity to control large currents and thus create a variable resistance in the circuit. It works by having an insulated gate that can be charged with a voltage, affecting the source-drain current in the channel.
The working process of IRLU9343 contains two stages: forward bias (ON) and reverse bias (OFF). When a forward bias voltage is applied to the gate terminal, the oxide layer between the gate and the channel\'s silicon will charge up. This causes a positive gate bias and allows electrons to flow from the source to the drain, thus creating a conductive channel. The drain-source current will be in a linear relationship with the voltage on the gate, allowing for very precise current control.
Additionally, the IRLU9343 offers low parasitic capacitance and low gate drive requirements, enabling high efficiency designs without the need for a voltage converter. It also offers excellent temperature stability, with a temperature coefficient of approximately -2mV/V/C. The device has an operating temperature range of -40 to 150C.
The IRLU9343 is an ideal solution for low power, high frequency, and low-noise applications. Its low gate charge and low on-resistance make it ideal for switching low-voltage, low-current applications. It is suitable for a variety of applications including energy-efficiency lighting, motors, power supplies and other switching applications requiring performance, power efficiency, and low-noise operation.
The specific data is subject to PDF, and the above content is for reference
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