IRLU9343 Allicdata Electronics
Allicdata Part #:

IRLU9343-ND

Manufacturer Part#:

IRLU9343

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 55V 20A I-PAK
More Detail: P-Channel 55V 20A (Tc) 79W (Tc) Through Hole I-PAK
DataSheet: IRLU9343 datasheetIRLU9343 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLU9343 is a single-channel, low-power, high-efficiency, N-channel power MOSFET with fully balanced Gate, Source, and Drain. It is designed for switching applications, such as motor drivers and power supplies.

The IRLU9343 is designed for low-current, low-power operations, making it ideal for battery-powered systems, as well as high-efficiency applications needing low on-resistance and low gate drive requirements. It is also characterized for very low input capacitance, which can reduce switching losses and improve noise immunity. Due to its low gate charge, the IRLU9343 achieves fast switching times, making it suitable for high-current, high-speed applications.

The n-channel enhancement mode field-effect transistor (FET), such as the IRLU9343, is a three-terminal voltage-controlled semiconductor device that has the capacity to control large currents and thus create a variable resistance in the circuit. It works by having an insulated gate that can be charged with a voltage, affecting the source-drain current in the channel.

The working process of IRLU9343 contains two stages: forward bias (ON) and reverse bias (OFF). When a forward bias voltage is applied to the gate terminal, the oxide layer between the gate and the channel\'s silicon will charge up. This causes a positive gate bias and allows electrons to flow from the source to the drain, thus creating a conductive channel. The drain-source current will be in a linear relationship with the voltage on the gate, allowing for very precise current control.

Additionally, the IRLU9343 offers low parasitic capacitance and low gate drive requirements, enabling high efficiency designs without the need for a voltage converter. It also offers excellent temperature stability, with a temperature coefficient of approximately -2mV/V/C. The device has an operating temperature range of -40 to 150C.

The IRLU9343 is an ideal solution for low power, high frequency, and low-noise applications. Its low gate charge and low on-resistance make it ideal for switching low-voltage, low-current applications. It is suitable for a variety of applications including energy-efficiency lighting, motors, power supplies and other switching applications requiring performance, power efficiency, and low-noise operation.


The specific data is subject to PDF, and the above content is for reference

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