IRLU2705

Series:	HEXFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55V
Current - Continuous Drain (Id) @ 25°C:	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	40 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 5V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	880pF @ 25V
FET Feature:	--
Power Dissipation (Max):	68W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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Introducing the IRLU2705

The IRLU2705 is a type of single-pole MOSFET transistor that is better suited to applications requiring high power protection. As this type of transistor is a type of Field Effect Transistor (FET), it uses switches that are capable of controlling a range of current and voltages. As this type of transistor has a high voltage capacity, it is ideal for use in applications that require a large degree of voltage protection.

IRLU2705 Specifications and Features

The IRLU2705 is a single-pole Power MOSFET transistor with a -55V to -100V load and a 200W maximum power capability. It can handle a drain-source break down voltage of up to 200V, a drain-source on voltage of up to 110V, and a drain-current at 25 degrees Celsius of up to 8.5A. Other features of the IRLU2705 include a 0.33R dynamic resistance, a maximum drain gate voltage of 20V, and a gate source threshold voltage of 4V.

Applications of the IRLU2705

The IRLU2705 single-pole Power MOSFET transistor is designed for a variety of applications, as it has a high voltage capacity and power handling capabilities. It can be used to regulate current and voltage and is suitable for applications that require a large degree of protection. Some of the typical applications for the IRLU2705 include, but are not limited to:- AC/DC switching- Motor control - Home automation - Automotive electronics- Industrial control

Working Principle of the IRLU2705

The working principle behind the IRLU2705 single-pole MOSFET transistor is based on the idea of using a gate-controlled switch. This transistor can be used to control the current and voltage in a circuit by using a gate voltage, which will turn the transistor ‘on’ or ‘off’. The drain-source break down voltage and the drain-source on voltage of the IRLU2705 are controlled by the gate voltage. When the gate voltage is greater than the drain-source on voltage, the transistor will be ‘on’ and allow current through the circuit. When the gate voltage is lower than the drain-source break down voltage, the transistor will be ‘off’ and block current from flowing through the circuit.

Conclusion

In conclusion, the IRLU2705 single-pole MOSFET transistor is a type of Field Effect Transistor with a high voltage capacity and power handling capabilities. Its applications include motor control, home automation, automotive electronics, and industrial control. It works by controlling the current and voltage in a circuit by using a gate voltage, which turns the transistor ‘on’ or ‘off’.

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