Allicdata Part #: | IRLU8113PBF-ND |
Manufacturer Part#: |
IRLU8113PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 94A I-PAK |
More Detail: | N-Channel 30V 94A (Tc) 89W (Tc) Through Hole I-PAK |
DataSheet: | IRLU8113PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 94A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2920pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 89W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRLU8113PBF, or the International Rectifier Ultra Low Gate Charge Low Penny Footprint, is a Low-side Driver MOSFET with a low gate charge and small footprint, ideal for use in industrial and communications applications. It is designed for high current switching applications and ensures very fast switching and excellent noise immunity. The IRLU8113PBF also offers very low drain to source on-resistance, making it suitable for automotive and industrial applications.
Application Field
The IRLU8113PBF is suitable for use in many applications such as power supplies, inverters, motor drives, and welding. In power supplies, it can be used as the main switch to regulate the flow of power, while in inverters and motor drives, it can be used as the switching element to control the motor speed. In welding, it can be used to control the current flow during welding. Furthermore, the IRLU8113PBF can be used in home appliances and LED lighting.
Working Principle
The IRLU8113PBF is a Low-side Driver MOSFET that uses a p-channel MOSFET as the main device. It is an enhancement-mode device which means that, unlike depletion-mode MOSFETs, it must be driven above its threshold to turn it on. When the gate voltage is smaller than the threshold voltage, the p-channel MOSFET is cut off, and no current is flowing through it.
When a sufficient gate voltage is applied across the gate of the IRLU8113PBF, the p-channel MOSFET turns on, allowing current to flow from drain to source. Depending on the width of the channel and the threshold voltage, the resistance between drain and source can be reduced to less than 1 ohm for a given total gate charge. The total gate charge is the sum of the gate charge for threshold and duty cycles, which are typically 7 nanoCoulombs or less.
Due to its low gate charge, the IRLU8113PBF can be used in high-power applications that require fast switching speeds. The low drain-to-source on-resistance also reduces power consumed and helps reduce heat generated. The IRLU8113PBF also features excellent noise immunity and EMI reducing capability.
Conclusion
The IRLU8113PBF is a Low-side Driver MOSFET with a low gate charge and small package ideal for use in industrial, automotive, communications, home appliance, and LED lighting applications. Its low gate charge allows quick switching speeds, while its low resistance and excellent noise immunity help reduce power consumption and heat generation.
The specific data is subject to PDF, and the above content is for reference
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