Allicdata Part #: | IRLU3705ZPBF-ND |
Manufacturer Part#: |
IRLU3705ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 42A I-PAK |
More Detail: | N-Channel 55V 42A (Tc) 130W (Tc) Through Hole IPAK... |
DataSheet: | IRLU3705ZPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 130W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRLU3705ZPBF is a P-channel metal oxide semiconductor field effect transistor (MOSFET) developed by Infineon Technologies. It has a superior current carrying capability, low Rdson and a wide operating temperature range for various applications. This article will discuss the application field of IRLU3705ZPBF and its working principle.
Application Field of IRLU3705ZPBF
IRLU3705ZPBF can be used in many general purpose applications such as motor control, power supply sequencing and protection, load switching, and high-speed power switching applications. It can be used in low-side switch applications, as it can handle drain-source voltages up to -200 V. It is also suitable for battery management systems that require both high current delivery and low drain-source on-resistance. Additionally, IRLU3705ZPBF is used in automotive applications such as traction inverters, charging systems and starter motors. It meets the ISO 10605 requirements related to electro-magnetic interference (EMI).
Working Principle of IRLU3705ZPBF
IRLU3705ZPBF consists of an insulated gate and a channel of N-type material between source and drain. When the gate is not connected, no current flows from the source to drain, as the resistance between them is very high due to the insulation property of the gate. When a voltage is applied to the gate of IRLU3705ZPBF, electrons are attracted to the gate, forming an electron region and a hole region in the channel. A conductive path is formed between drain and source and the current flows between them as required. This type of junction between gate and channel is known as the “depletion region” and is crucial for IRLU3705ZPBF to operate.
IRLU3705ZPBF has a high power rating and can handle continuous drain currents up to 40A. It has a low gate threshold voltage and a low input capacitance of 2.5 pF. It is also capable of operating at high temperature, up to 175 °C, making it highly suitable for automotive applications. The body-diode recovery time of IRLU3705ZPBF is also very fast, making it suitable for high switching speed applications. Furthermore, IRLU3705ZPBF has a robust and compact design, making it highly integrated, which makes it suitable for handheld electronics.
Conclusion
IRLU3705ZPBF has a wide range of applications due to its high current carrying capability, low Rdson, wide temperature range and robust design. It is suitable for many automotive and general purpose applications like motor control, power supply sequencing and protection, load switching, and high-speed power switching. Its working principle is based on the depletion region between the insulated gate and the N-type channel, which allows current to flow from source to drain when a voltage is applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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