Allicdata Part #: | IRLU7833-ND |
Manufacturer Part#: |
IRLU7833 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 140A I-PAK |
More Detail: | N-Channel 30V 140A (Tc) 140W (Tc) Through Hole I-P... |
DataSheet: | IRLU7833 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4010pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRLU7833 Application Field and Working Principle
IRLU7833 is a high side, N-Channel enhancement mode Field Effect Transistor(FET). It is used for switching and audio applications in the automotive automotive, industrial and consumer areas. It is offered in a low-resonance SO-8 package with which is specifically designed for higher integration and enhanced density.
IRLU7833 has a wide application range since it can be used to accurately control currents in high-side switching applications. It is also used for amplifiers and in audio applications since it has very low parasitics and increased noise immunity. It is suitable for high frequency switching as it has outstanding high speed switching performance. It is also mainly used for high power DC-DC conversion, high speed DC-DC conversion, LED lighting and motor control.
Working Principle
IRLU7833 is an N-Channel enhancement-mode Field Effect Transistor (FET) and it works differently than other transistors. Unlike conventional transistors, FETs don’t use bipolar current flow to control current or voltage, they instead use an electric field. As compared to bipolar transistors, FETs have fewer losses and require less energy. This makes FETs ideal for high switching and audio applications.
In an N-channel FET such as the IRLU7833, current can flow from the drain to the source when a gate voltage is applied. However, if a reverse gate voltage is applied to an N-channel FET, the field effect turns off and current can\'t flow. This is important to note because it is what makes FETs ideal for low-loss applications. This is because when the FET is turned off, the drain-source depletion region does not have to be penetrated. This prevents losses as compared to other FETs such as P-Channel FETs that have to be turned off and then require energy to turn back on.
The IRLU7833 is rated to handle up to a max drain to source voltage of 40V and source to drain current of 0.45A. With these ratings, the IRLU7833 is suitable for a wide range of applications such as high side switch applications, audio applications, and DC-DC conversion. It can also be used as an amplifier because of its relatively low noise and parasitics.
Conclusion
In conclusion, the IRLU7833 is a high side N-Channel enhancement mode field effect transistor (FET) which is used for switching and audio applications in automotive, industrial and consumer devices. It has a wide range of applications including high side switch applications, audio applications, DC-DC conversion and more. Due to its low parasitics, increased noise immunity and high speed performance, the IRLU7833 is ideal for a wide range of applications. Furthermore, as compared to bipolar transistors, FETs have fewer losses and require less energy making them a more efficient and reliable choice in power switching applications.
The specific data is subject to PDF, and the above content is for reference
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IRLU3715PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 54A I-PAK... |
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