Allicdata Part #: | IRLU2703PBF-ND |
Manufacturer Part#: |
IRLU2703PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 23A I-PAK |
More Detail: | N-Channel 30V 23A (Tc) 45W (Tc) Through Hole IPAK ... |
DataSheet: | IRLU2703PBF Datasheet/PDF |
Quantity: | 1000 |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
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IRLU2703PBF is an enhancement-mode, low drain-source on-resistance, P-channel power MOSFETs with excellent switching performance. This type of MOSFET is widely used in applications where low power consumption and fast switching capabilities are essential. It is also suitable for low voltage display application, and it has excellent surge current capability.
The IRLU2703PBF has a maximum drain-source voltage of 20V and a maximum drain-source on-resistance of 67mΩ. It has a total gate charge of 8nC, which allows it to switch at high frequencies and maintain a low switching loss. This device also offers good thermal performance and excellent noise immunity capabilities.
The IRLU2703PBF is widely used in a variety of applications, including power switches, motor control, battery management systems, and low voltage display applications. It is also used in low voltage switching circuits and regulation circuits.
The IRLU2703PBF works by applying a gate-to-source voltage. This voltage changes the drain-source resistance, which in turn controls the amount of current flow through the device. When the source-to-drain voltage is low, the drain-source resistance is low, allowing for a high current flow. When the source-to-drain voltage is high, the drain-source resistance is high, preventing current flow. The IRLU2703PBF is capable of switching at high frequencies and maintain low switching loss due to its low gate-to-source charge.
The IRLU2703PBF is capable of delivering excellent performance with low power consumption and fast switching capabilities. This MOSFET type offers good thermal performance and excellent noise immunity capabilities. It is also capable of excellent surge current capability and is suitable for low voltage display applications.
Overall, the IRLU2703PBF is an excellent choice for a variety of applications where low power consumption and fast switching capabilities are essential. It is capable of delivering excellent performance with low gate-to-source charge, as well as excellent thermal performance and excellent noise immunity capabilities. This device is an excellent choice for power switches, motor control, battery management systems, and low voltage display applications.
The specific data is subject to PDF, and the above content is for reference
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