Allicdata Part #: | IRLU3103-ND |
Manufacturer Part#: |
IRLU3103 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 55A I-PAK |
More Detail: | N-Channel 30V 55A (Tc) 107W (Tc) Through Hole I-PA... |
DataSheet: | IRLU3103 Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 107W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU3103 MOSFET is one of the most widely used transistors in the industry today, used in a vast array of applications. This paper will discuss the principle behind the IRLU3103, as well as its usage in different fields.
The IRLU3103, also known as an Insulated-Gate Field Effect Transistor (IGFET), is a form of Metal-Oxide Semiconductor Field-Effect Transistor, or MOSFET. This type of device derives its name from its construction: two metal contacts, called the gate and the source, are separated by an insulating layer. When a voltage is applied to the gate-source junction, it creates an inversion layer covering the surface of the transistor, allowing current to flow from the source to the drain.
The IRLU3103 is designed to handle high current and voltage in applications such as motor drive circuits and solar inverters. It can also be used in power supply applications, as the low on-state resistance makes it ideal for regulating current. When controlling motor speed, the IRLU3103 is typically used in an octal package, which allows for more efficient heat dissipation.
The IRLU3103 also has applications in low voltage switching and inverter circuits. The low on-state resistance makes it suitable for reducing voltage drop between the source and the drain, making it ideal for applications such as switching power supplies or uninterruptible power supplies. Other applications include high speed signal switching, such as in telecommunications or digital circuit design.
The working principle of the IRLU3103 is quite simple. When a voltage is applied to the gate-source junction, it inverts the polarity of the surface charge, creating an inversion layer. This allows current to flow from the source to the drain. The IRLU3103 can also be used to control the level of current or voltage, as the resistance of the inversion layer can be adjusted by changing the voltage at the gate.
The IRLU3103 offers many advantages over other types of MOSFETs, as it has a lower on-state resistance and can handle higher currents and voltages. As such, it is often used in a wide range of applications, from motor drive circuits to inverters and signal switching. Its low on-state resistance makes it ideal for controlling the current or voltage in a circuit, making it versatile and useful for a large range of applications.
The specific data is subject to PDF, and the above content is for reference
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