IRLU7833PBF Allicdata Electronics
Allicdata Part #:

IRLU7833PBF-ND

Manufacturer Part#:

IRLU7833PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 140A I-PAK
More Detail: N-Channel 30V 140A (Tc) 140W (Tc) Through Hole I-P...
DataSheet: IRLU7833PBF datasheetIRLU7833PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLU7833PBF is a single n-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), manufactured by Infineon Technologies AG, specifically designed for mass-market consumer and commercial applications. The MOSFET is a three-terminal unipolar device consisting of a source, gate, and drain. It is a voltage-controlled device, as the drain current is regulated by the gate-source voltage, while the gate voltage is kept reverse biased by a gate-source resistor. It features good thermal stability, low gate charge, high output resistance, and fast switching speed.

The IRLU7833PBF has a range of applications, from power switching and servo motor control to motor speed control, DC-DC converters, motor drives, and motor control. It is well suited for battery-powered applications, as it is capable of handling a wide range of voltage and current levels, as well as an array of operating temperatures. It is also commonly used for applications requiring low On-Resistance. Since it is designed for low-voltage, low-current applications, it is well suited for Class D, E, and F amplifiers, as well as audio and video amplifiers.

The IRLU7833PBF’s working principle is relatively simple. The device has two terminals, the source and the drain. When the gate voltage is reverse-biased, or at 0V, the source-drain resistance is huge, effectively blocking current. However, when a positive voltage is applied to the gate, the resistance between the source and the drain is reduced, allowing a current to flow. This current flow is accurately regulated by the gate voltage.

The drain current is then limited by the gate-source resistor and is only able to flow up to its maximum value when the voltage between the gate and the source (VGS) reaches a certain threshold voltage, which is known as the ‘threshold voltage’. This threshold voltage is determined by the device type and is usually specified within the device’s datasheet. When the drain current reaches this threshold voltage, the device can no longer handle more current, and will shut off.

The IRLU7833PBF is a low-voltage, low-current, fast-switching MOSFET, designed for mass-market consumer applications. It is well suited for a range of applications, ranging from power switching and motor control, to battery-powered applications. Its working principle is relatively simple; when the gate voltage is reverse-biased, the source-drain resistance is huge, effectively blocking current. However, when a positive voltage is applied to the gate, the resistance between the source and the drain is reduced, allowing a current to flow, which is regulated by the gate voltage. Its threshold voltage and gate-source resistor help to ensure that it cannot handle more current than what it is designed to.

The specific data is subject to PDF, and the above content is for reference

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