Allicdata Part #: | IRLU8259PBF-ND |
Manufacturer Part#: |
IRLU8259PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 57A IPAK |
More Detail: | N-Channel 25V 57A (Tc) 48W (Tc) Through Hole I-PAK |
DataSheet: | IRLU8259PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRLU8259PBF is a Power MOSFET designed for high power switching applications. This MOSFET comes in an SOT-23 package which is very compact and very cost-effective. It is suitable for a wide range of high current switching applications, such as automotive, industrial, telecommunications and consumer applications.
IRLU8259PBF is a single N-channel enhancement-mode MOSFET which provides very low on-state resistance for high current applications. It has an excellent gate charge and low gate-source capacitance for high speed switching. It has an integrated protection diode which makes it suitable for applications where high surge currents may exist. It also has an integrated thermal-shutdown feature which provides protection against over-temperature. The device can also be used in Battery Charging System applications.
The working principle of the IRLU8259PBF is similar to that of other enhancement-mode MOSFETs. When the MOSFET is in the off state, there is no conduction between the source and drain. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the source to the drain and allows current to flow. This will turn off the MOSFET.
The IRLU8259PBF is suitable for a wide range of high current switching applications such as power converters, motor control and lighting controls. It can also be used in high current switching applications such as automotive, industrial, telecommunications and consumer applications. It has a very low on-state resistance and very low gate-source capacitance, which make it suitable for high speed switching applications. The integrated protection diode also makes it suitable for applications where high surge currents may exist. The integrated thermal-shutdown feature also provides protection against over-temperature.
The IRLU8259PBF is a very good choice for high power switching applications. It is cost-effective and has good performance. It is also suitable for a wide range of high current switching applications and can be used in Battery Charging System applications. It is an excellent choice for those who are looking for an efficient and reliable MOSFET.
The specific data is subject to PDF, and the above content is for reference
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