Allicdata Part #: | IRLU3114ZPBF-ND |
Manufacturer Part#: |
IRLU3114ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 42A I-PAK |
More Detail: | N-Channel 40V 42A (Tc) 140W (Tc) Through Hole I-PA... |
DataSheet: | IRLU3114ZPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3810pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRLU3114ZPBF is an enhancement-mode power MOSFET, a type of field-effect transistor (FET). It is part of the IRFZ44N family manufactured by Infineon Technologies AG. This type of transistor is used in power applications and has the capacity to handle a load between 0.100 and 100 volts.
The IRLU3114ZPBF is an ideal choice for power switching, motor control, and other power control applications. It is considered to be a robust device due to its low on-state resistance and high avalanche energy rating. It also features a high power dissipation (PD) rating of up to 2.6 Watts, making it a suitable choice for high switching current applications. Furthermore, it allows for a wide range of power levels from 100mW to 10W.
In order to achieve optimum performance, the IRLU3114ZPBF must be used in conjunction with an appropriate gate drive circuit. This is because it has an reverse voltage rating of at least 100V and an on-state resistance (RDS(ON)) value of 3.3 ohms. The use of a suitable gate drive allows the MOSFET to operate with a higher power supply voltage, while maintaining the drain current at a predetermined level.
The IRLU3114ZPBF can be used in various applications such as switched-mode power supplies, DC/DC converters, and audio power amplifiers. Additionally, they can be used in automotive applications such as brushed or brushless motor control circuits, lighting dimmers, DC fans, and as power switches in hybrid or electric vehicles.
The operating principle of FETs is based on the behavior of electric fields. Electric fields applied between two terminals of a FET, namely the gate and the source electrodes, generate the enablement current from the source region to the drain. This enablement current allows for the flow of gate voltage to the drain, and thus enabling the field effect. So, in essence, FETs can be used as amplifying devices in conjunction with a gate driving signal.
When used for power applications, the IRLU3114ZPBF’s low on-state resistance and high avalanche energy rating allow it to provide efficient switching performance. Its ability to withstand higher voltage enables it to provide reliable power delivery in applications involving high voltage and current levels. Furthermore, the IRLU3114ZPBF is immune to ESD damage and its use in power control applications is beneficial in terms of device longevity since it eliminates the need to use expensive fuses.
The specific data is subject to PDF, and the above content is for reference
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