Allicdata Part #: | IRLU7807ZPBF-ND |
Manufacturer Part#: |
IRLU7807ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 43A I-PAK |
More Detail: | N-Channel 30V 43A (Tc) 40W (Tc) Through Hole I-PAK |
DataSheet: | IRLU7807ZPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13.8 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU7807ZPBF is a single channel enhancement mode field effect power transistor (FET) used to amplify, switch or reverse voltage in an electronic circuit. It belongs to the Insulated Gate Bipolar Transistor (IGBT) family and is suitable for a wide range of applications such as motor control, power switching, and power management. This FET is available in a TO-262 package making it suitable for connecting in a system or as a single unit.
The IRLU7807ZPBF works on the principle of a voltage controlled gate. The device consists of two parts – a P-channel MOSFET and an N-channel MOSFET. When a voltage is applied to the gate of the N-channel MOSFET, a field effect is created in the channel, which modifies the current flow between the drain and the source. This current flow controls the output of the device. In contrast, the P-channel MOSFET works in the opposite direction, controlling how much voltage is allowed to flow to the output of the FET.
The IRLU7807ZPBF can be used to regulate the current or voltage in a wide range of applications. It can be used as a switch or a gate element in low power circuits such as gate drivers of integrated gate commutated power thyristor (IGCT). It can also be used as a variable resistor or as a slave component in a voltage sag correction system. In addition, the IRLU7807ZPBF can be used for applications such as pipeline switching, battery charging, and motor control.
The IRLU7807ZPBF is highly efficient and has a low operating temperature. Its high current capacity and low On-state resistance make it suitable for providing power to high-current applications such as motor control, power switching, and power management. The device has an operating temperature range of -40 to 150 °C, making it suitable for a wide range of operating environments.
In conclusion, the IRLU7807ZPBF is a single channel enhancement mode field effect power transistor that can be used for a variety of applications in the automotive, industrial, and consumer electronics markets. It is a reliable, efficient and cost-effective solution for controlling and switching power. Furthermore, with its high current capacity and low On-state resistance, the device is suitable for applications such as motor control, power switching, and power management.
The specific data is subject to PDF, and the above content is for reference
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