IRLU3714Z Allicdata Electronics
Allicdata Part #:

IRLU3714Z-ND

Manufacturer Part#:

IRLU3714Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 37A I-PAK
More Detail: N-Channel 20V 37A (Tc) 35W (Tc) Through Hole I-PAK
DataSheet: IRLU3714Z datasheetIRLU3714Z Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
FET Feature: --
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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IRLU3714Z is a single-channel, 31V N-channel MOSFET with a drain voltage of 100V. It is one of the highest voltage MOSFETS currently available and features excellent thermal performance and input Vgs tolerance. With a pin spread of 3.9 mm and a DFN 3x3-10 package, this device is able to fit into a wide variety of applications. The IRLU3714Z is ideally suited for automotive and industrial environments, as well as battery management and power conversion.

The IRLU3714Z is a type of Field Effect Transistor (FET). It works by using a gate voltage to control the flow of current between the source and drain terminals. Unlike a bipolar transistor, which uses current to switch the state, an FET uses voltage. This makes them much more power-efficient and allows for smaller components.

The IRLU3714Z is ideal for power conversion applications where high voltage and high current capability is needed. The on-resistance of this device is less than 5 milliohms, resulting in low power losses. The maximum drain current is 10 A, and the maximum drain-source voltage is 100V, allowing for efficient power management. The high input capacitance of the IRLU3714Z also makes it suitable for high-frequency applications.

The device also features a very low gate-threshold voltage of 2 volts and excellent drain-source leakage current, making it perfect for low-noise applications. The maximum junction temperature of the device is 175°C, and the maximum power dissipation is 12W. In addition, the IRLU3714Z features a moderate speed and fast switching, making it suitable for high-speed switching applications. The IRLU3714Z is also easy to implement, with a wide operating range and a standard package size.

The IRLU3714Z is designed to meet many of the harshest environmental conditions, making it a great option for automotive and industrial applications. Additionally, the device is fully AEC-Q101 qualified, so it is suitable for automotive applications. The IRLU3714Z is also very reliable and has a long service life, even in the most demanding applications.

In summary, the IRLU3714Z is a single-channel, 31V N-channel MOSFET with excellent thermal performance and input Vgs tolerance. It is ideal for automotive and industrial applications as well as battery management and power conversion. The device has a very low gate-threshold voltage and a high input capacitance, making it suitable for high-frequency applications. Its maximum junction temperature and its maximum power dissipation are impressive, making it a great option for applications in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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