Allicdata Part #: | IRLU3714Z-ND |
Manufacturer Part#: |
IRLU3714Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 37A I-PAK |
More Detail: | N-Channel 20V 37A (Tc) 35W (Tc) Through Hole I-PAK |
DataSheet: | IRLU3714Z Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRLU3714Z is a single-channel, 31V N-channel MOSFET with a drain voltage of 100V. It is one of the highest voltage MOSFETS currently available and features excellent thermal performance and input Vgs tolerance. With a pin spread of 3.9 mm and a DFN 3x3-10 package, this device is able to fit into a wide variety of applications. The IRLU3714Z is ideally suited for automotive and industrial environments, as well as battery management and power conversion.
The IRLU3714Z is a type of Field Effect Transistor (FET). It works by using a gate voltage to control the flow of current between the source and drain terminals. Unlike a bipolar transistor, which uses current to switch the state, an FET uses voltage. This makes them much more power-efficient and allows for smaller components.
The IRLU3714Z is ideal for power conversion applications where high voltage and high current capability is needed. The on-resistance of this device is less than 5 milliohms, resulting in low power losses. The maximum drain current is 10 A, and the maximum drain-source voltage is 100V, allowing for efficient power management. The high input capacitance of the IRLU3714Z also makes it suitable for high-frequency applications.
The device also features a very low gate-threshold voltage of 2 volts and excellent drain-source leakage current, making it perfect for low-noise applications. The maximum junction temperature of the device is 175°C, and the maximum power dissipation is 12W. In addition, the IRLU3714Z features a moderate speed and fast switching, making it suitable for high-speed switching applications. The IRLU3714Z is also easy to implement, with a wide operating range and a standard package size.
The IRLU3714Z is designed to meet many of the harshest environmental conditions, making it a great option for automotive and industrial applications. Additionally, the device is fully AEC-Q101 qualified, so it is suitable for automotive applications. The IRLU3714Z is also very reliable and has a long service life, even in the most demanding applications.
In summary, the IRLU3714Z is a single-channel, 31V N-channel MOSFET with excellent thermal performance and input Vgs tolerance. It is ideal for automotive and industrial applications as well as battery management and power conversion. The device has a very low gate-threshold voltage and a high input capacitance, making it suitable for high-frequency applications. Its maximum junction temperature and its maximum power dissipation are impressive, making it a great option for applications in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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