| Allicdata Part #: | IRLU3636PBF-ND |
| Manufacturer Part#: |
IRLU3636PBF |
| Price: | $ 0.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 50A IPAK |
| More Detail: | N-Channel 60V 50A (Tc) 143W (Tc) Through Hole I-PA... |
| DataSheet: | IRLU3636PBF Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.60396 |
| Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 143W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3779pF @ 50V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.The IRLU3636PBF is a logic level independent N-channel MOSFET with a maximum drain source voltage of 40V, a maximum current of 30A, and a drain source on resistance of 4.5mΩ. This device is ideal for use in applications that require high power and low resistance.
The IRLU3636PBF belongs to the family of hardware components known as field-effect transistors (FETs), which are used in all types of electronics. FETs are three-terminal devices that are designed to act as a switch or amplifier. FETs are widely used in a wide range of applications because they can be easily integrated into complex systems.
The IRLU3636PBF is a single pole single throw (SPST) FET device that is used to control power in countless applications. The device is commonly used in automotive, marine, and industrial applications, as well as in audio/video systems. It is also used for solar energy power control, as well as for switching high-current common collector loads.
This FET works by utilizing the principle of voltage control. A voltage is applied between the gate and source terminals of the device, which creates an electric field. This electric field in turn affects the conductivity of the drain-source channel created between the source and drain. This reduces or increases the current flow through the channel, which causes the device to act as a switch or amplifier.
The IRLU3636PBF is capable of providing very high switching speeds and switching capability, as well as a low gate threshold voltage (Vgs(th)). The device is well suited for low-power applications and can be used for switching high power loads without the need for additional gate drive circuitry. It also has a relatively low capacitance, which helps to reduce cross-conduction losses and increases power efficiency.
This FET is also very reliable and has an average life of over 50k hours. It is also resistant to electrical surges, shock, and vibration, making it ideal for use in industrial and automotive applications. The device can also withstand high temperatures and is suitable for both through-hole and surface-mount applications.
The IRLU3636PBF is a versatile and efficient FET that is designed for use in high power applications. It is capable of providing high switching speeds, low gate threshold voltage, and reliable performance. It can be used in both through-hole and surface-mount applications and is perfect for applications that require high power and low resistance.
The specific data is subject to PDF, and the above content is for reference
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IRLU3636PBF Datasheet/PDF