Allicdata Part #: | IRLU7821PBF-ND |
Manufacturer Part#: |
IRLU7821PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 65A I-PAK |
More Detail: | N-Channel 30V 65A (Tc) 75W (Tc) Through Hole I-PAK |
DataSheet: | IRLU7821PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU7821PBF is a P-channel Hexfet power MOSFET N-channel MOSFET transistor of the International Rectifier Corporation product family. The IRLU7821PBF has a peak drain current rating of 20A and a drain to source voltage rating of up to -20V. This MOSFET transistor is suitable for a variety of applications such as switch mode power supplies, motor control and high-speed switching circuits. It is available in a TO-220AB package.
Application Field of IRLU7821PBF
Due to its low on-state resistance (RDS(on)) of 0.045 Ω, and fast switching speed, the IRLU7821PBF makes it an ideal choice for a range of different applications, such as:
- Switch mode power supplies
- Motor Control Applications
- High-speed switching circuits
- Battery Management Systems
- DC to DC Converters
- Low side power switches
- High density power management
Working Principle of IRLU7821PBF
A P-channel Hexfet Power MOSFET is an insulated-gate Field Effect Transistor or FET. The IRLU7821PBF is an N-channel MOSFET and uses N-type semiconductor material to create an array of electronically isolated channels. It has a single gate terminal and multiple drains and sources. The P-channel Hexfet Power MOSFET is characterized by its low on-state resistance (RDS(on)) and fast switching speeds.
The P-channel Hexfet Power MOSFET is a three-terminal device that has a gate input, a source terminal, and a drain terminal. In operation, the gate input acts as a control signal to the device, either allowing or limiting the current flow from the source to the drain. When a negative voltage is applied to the gate, the result is an ON state, in which current flows from the source to the drain. When no gate voltage is applied, the device is in an ideal OFF state.
The IRLU7821PBF has a threshold voltage of -5 V, which is the voltage that needs to be applied to the gate in order to switch the device ON. The device also has a maximum drain-source voltage rating of -20V and a peak drain current of 20A. The drain-source on-resistance (RDS(on)) is 0.045 Ω and the gate-source threshold voltage can range from -5 V to -7 V.
The IRLU7821PBF has the capability for fast slew rate, low input capacitance and a built-in reversed diode on the drain lead for ESD protection (electro-static discharge). This device is ideal for a variety of applications, including switch mode power supplies, motor control and high-speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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