Allicdata Part #: | IRLU8729-701PBF-ND |
Manufacturer Part#: |
IRLU8729-701PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 58A IPAK |
More Detail: | N-Channel 30V 58A (Tc) 55W (Tc) Surface Mount I-PA... |
DataSheet: | IRLU8729-701PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Package / Case: | TO-252-4, DPak (3 Leads + Tab) |
Supplier Device Package: | I-PAK (LF701) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Introduction
The IRLU8729-701PBF is a high performance P-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) specifically designed for the broadband industry. It can be used in the switching, amplifying, and protection applications of digital, analogue, RF and mix-signal circuitry. This component is commonly used for its low on-resistance, fast switching, and thermal management capabilities.
Application Field
The IRLU8729-701PBF has a wide application field in broadband industry. It is mostly used in wireless base station systems, such as in base station power amplifiers, switch control, and power switching. Apart from being used in wireless base station systems, the component can also be used in the medical industry, owing to its high performance and reliability. Additionally, it can be used in DC/DC converters, high-efficiency switchgear, automotive applications, and other fields that need a robust MOSFET component that can handle a wide range of currents and voltages.
Working Principle
A MOSFET is a type of transistor that utilizes metal-oxide-semiconductor technology. The MOSFET is a voltage-controlled device, which means that the current flows through it depending on the voltage applied across its terminals. It is composed of a gate, a substrate, and a channel. As the voltage across the channel increases, the electrons are attracted to the gate, which can then control the current flowing through the channel. This makes it suitable for electronic circuit applications, as it can be used as a switch, an amplifier, and for protection purposes.
Advantages
The IRLU8729-701PBF offers several advantages over other MOSFET components. It has a low on-resistance, which results in low losses. It can also handle higher currents than most other MOSFETs, making it suitable for applications where high currents are needed. Furthermore, the device has a low gate threshold voltage, which allows for voltage control and fast switching. Apart from this, it also has an excellent thermal management with dynamic characteristics. This is important in the broadcast industry where long-term reliable operation is essential.
Conclusion
The IRLU8729-701PBF is a high performance P-channel MOSFET that is used in applications where high currents are needed. It has a low on-resistance, low gate threshold voltage, and excellent thermal management with dynamic characteristics. It is ideal for use in the broadcast industry, especially in wireless base station systems. With its robust handling of voltage, current, and thermal management, the IRLU8729-701PBF is an excellent MOSFET component that can provide reliable performance in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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