Allicdata Part #: | IXFA16N60P3-ND |
Manufacturer Part#: |
IXFA16N60P3 |
Price: | $ 3.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 16A TO-263AA |
More Detail: | N-Channel 600V 16A (Tc) 347W (Tc) Surface Mount TO... |
DataSheet: | IXFA16N60P3 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.53732 |
Vgs(th) (Max) @ Id: | 5V @ 1.5mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXFA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 347W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFA16N60P3 is a type of Field Effect Transistor (FET) which is used in various electronic and power applications. It is classified as a Single MOSFET, working at the drain-source voltage range of 100-600 volts. The FET can support a maximum current of 16 amps, and a maximum power dissipation of 150 watts.
A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of FET which uses an oxide semiconductor oxide gate to control current flow when voltage is applied to it. It is used as a switch or amplifier in various applications. It has several advantages over traditional transistors, including lower power consumption, higher frequencies, and faster switching speeds.
The IXFA16N60P3 has several features which make it suitable for a variety of applications. It has very low on-resistance which helps reduce power losses. The FET has a maximum drain-source breakdown voltage of 600 volts, which is suitable for many power switching applications. It also has an integrated dV/dt protection, which means it can handle high voltage spike and surge protection.
The IXFA16N60P3 also offers a high current carrying capacity of up to 16 amps. This allows for improved power output, higher performance in power applications, and increased energy efficiency. The FET also has an enhanced avalanche energy rating, which helps to ensure that it can withstand the power dissipated without breaking down. Lastly, the FET is able to operate at temperatures of up to 150°C.
The IXFA16N60P3 is typically used in applications that involve switching or amplifying power such as automotive, industrial, and commercial applications. It is also used in telecommunications, medical systems, and robotics. It is particularly useful in applications which require high speed switching, power conversion, and power management.
The working principle of the IXFA16N60P3 is similar to that of a standard FET. When a voltage is applied between the gate and the source, the FET will turn on, allowing current to flow through the drain and the source. The amount of current flowing depends on the amount of voltage applied to the gate. When the gate voltage is turned off, the FET will turn off, preventing current flow.
The IXFA16N60P3 is a highly reliable and efficient device which is used in a variety of applications. It has a variety of features which make it suitable for many power applications, and it is also able to handle high voltage spike and surge protection. For these reasons, it is the preferred FET for many power, industrial, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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