IXFA4N100Q

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The IXFA4N100Q is a 100V N-channel MOSFET transistor in the TO-253AA (D-Pak) package with a drain current of 4A and an on-state resistance of 0.3 (typ. @VGS=10V). The product is integrated with advanced Fast Intrinsic diode (FID) technology which provide low-forward voltage, low capacitance and fast switching performance. It also offers superior power and thermal performance, making it ideal for high current switching applications.

The IXFA4N100Q has a wide range of applications and can be used in a variety of high- current switching, power management, motor control, and LED lighting applications. These applications include automotive systems, power supplies, power distribution, inverters, and lighting systems. Additionally, the device can be used in combination with microcontrollers and other digital logic ICs to provide reliable, high-energy switching or control functions in a variety of applications.

The IXFA4N100Q\'s working principle can be defined as an N- and P-type field effect transistor (NFET and PFET respectively, sometimes referred to as MOSFETs). NFETs are commonly used when a high current flow is required and voltage is limited. When the voltage between source and drain terminals are positive, most of the current flows through the P-body region, rather than through the gate electrode.

When a NFET is switched on, a reverse biased gate-drain junction is formed and electrons are induced. This creates a conductive path from drain to source and current begins to flow from drain to source. The amount of current flowing through the device is determined by the gate voltage. When the gate voltage increases, more electrons are induced in the P-body region, resulting in higher drain current flow.

To turn off the device, the gate voltage must be reversed. This non-conductive state is maintained until a positive gate voltage is applied, which again creates a conductive path from drain to source. The switching characteristics of the IXFA4N100Q are controlled by the gate voltage and can be tailored to the user’s needs.

Due to its high current rating and fast switching performance, the IXFA4N100Q is an ideal choice for high current switching applications such as power supplies, power distribution, inverters, and LED lighting systems. Additionally, the device is suitable for use in combination with microcontrollers and other digital logic ICs.

The IXFA4N100Q has a TO-253AA (D-Pak) package and is available in the industry-standard TO-253AA format. The device is RoHS compliant and lead-free, making it a suitable choice for environmentally conscious designs. Additionally, it has an ESD HBM rating of 2kV, which ensures reliable operation under high-voltage ESD conditions.

In conclusion, the IXFA4N100Q is a 100V N-channel MOSFET transistor in the TO-253AA (D-Pak) package with a drain current of 4A and an on-state resistance of 0.3 (typ. @VGS=10V). The device is integrated with advanced Fast Intrinsic diode (FID) technology and is suitable for high- current switching, power management, motor control, and LED lighting applications. It offers superior power and thermal performance, making it an ideal choice for high current switching applications. The device has a TO-253AA (D-Pak) package and is RoHS compliant and lead-free with an ESD HBM rating of 2kV.

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