IXFA180N10T2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXFA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	480W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	185nC @ 10V
Series:	GigaMOS™, HiPerFET™, TrenchT2™
Rds On (Max) @ Id, Vgs:	6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFA180N10T2 is a type of field effect transistor (FET) that is used in a wide variety of applications, including digital logic, high-speed switching, power conditioning, and power control circuits. The device is a metal-oxide semiconductor field-effect transistor (MOSFET) with an integral insulated gate element. This article will discuss the application field and working principle of the IXFA180N10T2.

Applications of IXFA180N10T2

The IXFA180N10T2 is designed for high-performance, high-speed and high-voltage switching applications. It can be used in power conversion, motor control, automotive, and communications systems. It is also suitable for use in high-precision analog circuits, such as data acquisition, precision control, and signal processing systems. The device is designed to operate over a wide range of voltage and temperature conditions. It is capable of handling high current repetition rates. Its low on-resistance and low gate-drive characteristics make it suitable for high-speed, high-voltage switching applications.

The IXFA180N10T2 is also suitable for high-reliability/extreme temperature/harsh environment applications. It is capable of operating in extreme temperatures up to 175°C (Tj max). This makes it ideal for use in high-reliability automotive, military and aerospace applications. Its low gate drive voltage enables the IXFA180N10T2 to be used in high-voltage switching applications. It is capable of handling gate voltages up to +30V.

Working Principle of IXFA180N10T2

The IXFA180N10T2 is constructed from a metal oxide semiconductor structure and contains a charge carrier between the source and drain terminals. The charge carrier is a “surface-effect” electron, which is a single electron trapped inside the gate of the transistor. The charge carrier is attracted to the gate which results in a depletion region forming between the source and drain. This depletion region acts like a reverse biased diode and limits the current flow between the drain and source. The gate voltage controls the size of the depletion region and, therefore, the amount of current that can pass through the device.

The IXFA180N10T2 can be used as either an N-channel depletion mode or enhancement mode device. The operation of the device in depletion mode is similar to an ordinary diode. When the gate voltage is below the threshold voltage, the transistor is in a conducting state and current will flow between the drain and source. When the gate voltage is above the threshold voltage, the transistor is in an off state and no current will flow. The operation of the device in enhancement mode is akin to a switch. When the gate voltage is below the threshold voltage, the transistor is off and no current will flow. When the gate voltage is above the threshold voltage, the transistor is in an on state and current will flow between the drain and source.

The IXFA180N10T2 is also capable of handling pulsed current and has an extremely low gate threshold voltage for fast switching times. The device is designed to handle high current pulses up to 10A, allowing it to be used in high-power applications. Its low switching times also make it ideal for high-bandwidth circuits and digital logic applications.

In summary, IXFA180N10T2 is a highly versatile metal oxide semiconductor field effect transistor that can be used in a variety of applications, ranging from high-speed switching to power control. It offers low on-resistance, low gate drive requirements, and is capable of handling high current repetition rates. It is suitable for use in high-precision analog circuits, high-power applications, and digital logic systems. Its low gate threshold voltage and wide operating temperature range make it ideal for high-reliability/extreme temperature/harsh environment applications. The IXFA180N10T2 is a highly reliable transistor that is suitable for use in a variety of applications.

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