IXFA7N60P3

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The IXFA7N60P3 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high voltage and high current applications. It is a single-die MOSFET and features a self-protected full-pack geometry architecture. It is capable of providing high drain-source current (drain-source voltage) and excellent switching performance. The IXFA7N60P3 is an ideal choice for power conversion, motor control and other high voltage, high current switch applications.

Due to its robust construction, the IXFA7N60P3 offers excellent on-resistance and low gate-charge characteristics. It has an on-resistance of 40mΩ at 10V gate-source voltage, which makes it suitable for high current, high voltage PWM power cycling applications. The IXFA7N60P3 also boasts a Gate Threshold Voltage of 3V, allowing it to smoothly switch between conducting and non-conducting states. Additionally, its low gate charge makes the IXFA7N60P3 ideal for switching applications that require high operating frequencies.

The IXFA7N60P3’s self-protected full-pack geometry architecture ensures reliable operation even under extreme operating conditions. The device is constructed from a single die, which reduces thermal resistance and increases its ability to dissipate heat. It also features a high density design with low inductance for improved efficiency and reduced EMI emissions. Additionally, the device’s low turn-on/off times and high surge currents ensure fast and reliable performance.

In addition to its robust construction, the IXFA7N60P3 also offers a variety of control options. It is available in both Logic Level and Non-Logic Level configurations, allowing it to be integrated into different power management designs. For example, the IXFA7N60P3 can be used in DC-DC converters, high-current motor controllers, active filters, and power-over-Ethernet (PoE) systems. Additionally, the device’s fault protection features ensure stable and reliable operation even in the presence of fault conditions.

The IXFA7N60P3’s working principle is based on the well-known MOSFET structure. When a voltage is applied across the Gate and Source terminals, a current flows from the Source to the Gate. This current causes an electrostatic field to form in the thin oxide material between the Gate and Source terminals. This field modulates the resistance between the Drain and Source terminals, allowing the current to flow. The amount of current that flows depends on the voltage applied to the Gate terminal, which is referred to as the Gate Threshold Voltage. The Drain-Source resistance also varies with temperature, allowing the IXFA7N60P3 to function as an effective high-performance power switch.

The IXFA7N60P3 is a reliable and efficient power MOSFET designed for high voltage and current applications. Its single-die construction, robust self-protection, high on-resistance, low gate charge, and low thermal resistance make it an ideal choice for motor controllers, DC-DC converters, active filters, and PoE systems. Additionally, its fault protection features and various control options make it a reliable choice for any power management design. The IXFA7N60P3’s working principle is based on the MOSFET structure, allowing it to function as an effective high-performance power switch.

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