IXTH60N15 Allicdata Electronics
Allicdata Part #:

IXTH60N15-ND

Manufacturer Part#:

IXTH60N15

Price: $ 4.35
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 60A TO-247
More Detail: N-Channel 150V 60A (Tc) 275W (Tc) Through Hole TO-...
DataSheet: IXTH60N15 datasheetIXTH60N15 Datasheet/PDF
Quantity: 1000
30 +: $ 3.92091
Stock 1000Can Ship Immediately
$ 4.35
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 275W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH60N15 is a N-Channel enhancement mode field-effect transistor (PFET) integrated circuit (IC). This type of IC is commonly used in power supplies and DC-DC converters. It is suitable for switching and linear applications and can be used for both unipolar and bipolar voltage regulation.

The IXTH60N15 IC incorporates a special process technology which enables it to provide soft start function with fast rise and fall times as well as low-right on resistance (< 0.3Ω) capability. It also has extremely high current capability (3A), high peak drain current (3A), low gate threshold voltage (1.7V) and low gate output capacitance (8pF).

The construction of the IXTH60N15 is similar to that of a normal MOSFET. Its three terminals consist of a gate, drain and source. The drain and source are connected to the power supply. When a small amount of current is applied to the gate, a voltage-dependent channel is created between the drain and source terminals. This channel acts as a switch and allows current to flow between the power supply and the load, depending on the voltage applied to the gate.

The IXTH60N15 is mostly used for high-frequency applications where the switching speeds are in the nanosecond range. Its high current capability allows it to handle large load currents with minimal losses. Furthermore, its low gate capacitance and high-frequency shielding gives it excellent performance in high-speed switching applications.

The IXTH60N15 is also suitable for use in high-temperature environments such as automotive, high-reliability industrial and avionic systems. Its on-resistance parameters are secured even at 175°C junction temperature and it has low gate-threshold voltage even when exposed to elevated temperatures.

The IXTH60N15 has a wide range of applications that include power supplies, load switches, DC-DC converters, H-bridges, motor controllers and high-frequency signal switching. It is compatible with over-temperature, over-voltage and other extreme environmental conditions and can be used in both high- and low-frequency circuits. It is also an ideal choice for hot-swap applications.

In conclusion, the IXTH60N15 is a versatile N-channel enhancement mode field-effect transistor that is suitable for a wide range of power supply and DC-DC converter applications. Its fast switching time and low-right on resistance capability significantly improves the performance of high-frequency circuits. Its wide operating temperature range and high-temperature stability make it an ideal choice for high-reliability and mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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