Allicdata Part #: | IXTH20N50D-ND |
Manufacturer Part#: |
IXTH20N50D |
Price: | $ 19.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 20A TO-247 |
More Detail: | N-Channel 500V 20A (Tc) 400W (Tc) Through Hole TO-... |
DataSheet: | IXTH20N50D Datasheet/PDF |
Quantity: | 91 |
1 +: | $ 18.14400 |
30 +: | $ 15.42030 |
120 +: | $ 14.33170 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 400W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
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The IXTH20N50D is an Insulated Gate Bipolar Transistor (IGBT) device with a high input impedance that provides low on-state resistance and high speed switching capability. It is a vertical double diffused alloy junction field effect transistor (MOSFET) with a breakdown voltage of 600V. This device allows for very low on-state resistance and low switching time, as well as improved efficiency compared to other low voltage IGBT designs.
The IXTH20N50D is commonly used in power supplies, DC-DC converters, motor control, lighting control and other industrial applications requiring low on-state resistance and high speed switching capability. This device utilizes single drain-source current terminals to optimize its performance. The gate terminal provides the voltage control for the device, allowing for full control of its on-state and off-state conductivity.
The IXTH20N50D is a symmetrical breakdown vertical double diffused alloy junction field effect transistor. This device is composed of two parts; an N-type substrate with a single P-type source and two N-type drains connected in series. The source and drains are connected together through the source-gate oxide layer, which is used to control the on-state performance of the device. By controlling the gate-source voltage, the device’s conducting channel can be opened and closed, thereby controlling its conductivity and power dissipation.
The IXTH20N50D operates with a plane of symmetry in both the on-state and off-state conditions. This means that in the on-state, all drain currents are equal, and when the device is operating in the off-state, the gate-source voltage is equal across all drain terminals. This provides good temperature behavior, since the drain-source voltage is the same and the gate-source voltage is the same across all drain terminals.
The IXTH20N50D is rated for a 600V drain to source breakdown voltage and a maximum gate to source voltage of ±20V. This device has a peak current rating of 20A and a maximum power dissipation of 200W. The device is also available in several package types, including TO-220, TO-251, and TO-252, which provide a variety of options for design engineers.
The IXTH20N50D offers a number of advantages over other IGBTs of similar ratings, such as a lower on-state resistance and improved switching time. This device also has a lower forward voltage drop compared to other IGBTs of similar ratings, which further reduces power losses.
The IXTH20N50D is a high power, high speed, and low on-state resistance insulated gate bipolar transistor (IGBT) device. This device utilizes a single drain-source current terminal and a gate terminal for controlling its on-state and off-state conduction. This device is well suited for high power applications such as power supplies, DC-DC converters, motor control, and lighting control, where low on-state resistance and high speed switching capability are required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXTH21N50 | IXYS | 7.13 $ | 192 | MOSFET N-CH 500V 21A TO-2... |
IXTH02N250 | IXYS | 9.82 $ | 136 | MOSFET N-CH 2500V 0.2A TO... |
IXTH20N50D | IXYS | 19.96 $ | 91 | MOSFET N-CH 500V 20A TO-2... |
IXTH130N10T | IXYS | 2.59 $ | 80 | MOSFET N-CH 100V 130A TO-... |
IXTH6N50D2 | IXYS | 5.03 $ | 69 | MOSFET N-CH 500V 6A TO247... |
IXTH8P50 | IXYS | 5.12 $ | 10 | MOSFET P-CH 500V 8A TO-24... |
IXTH20N65X | IXYS | 5.62 $ | 85 | MOSFET N-CH 650V 20A TO-2... |
IXTH48N65X2 | IXYS | -- | 127 | MOSFET N-CH 650V 48A TO-2... |
IXTH30N60P | IXYS | 5.8 $ | 62 | MOSFET N-CH 600V 30A TO-2... |
IXTH62N65X2 | IXYS | 6.7 $ | 54 | MOSFET N-CH 650V 62A TO-2... |
IXTH88N30P | IXYS | 7.6 $ | 90 | MOSFET N-CH 300V 88A TO-2... |
IXTH80N65X2 | IXYS | -- | 49 | MOSFET N-CH 650V 80A TO-2... |
IXTH40N30 | IXYS | 9.0 $ | 26 | MOSFET N-CH 300V 40A TO-2... |
IXTH67N10 | IXYS | 9.95 $ | 35 | MOSFET N-CH 100V 67A TO24... |
IXTH75N10 | IXYS | -- | 43 | MOSFET N-CH 100V 75A TO24... |
IXTH1N200P3HV | IXYS | 5.04 $ | 21 | MOSFET N-CH 2000V 1A TO-2... |
IXTH1N200P3 | IXYS | 5.04 $ | 45 | MOSFET N-CH 2000V 1A TO-2... |
IXTH15N50L2 | IXYS | -- | 65 | MOSFET N-CH 500V 15A TO-2... |
IXTH24P20 | IXYS | -- | 6 | MOSFET P-CH 200V 24A TO-2... |
IXTH16N20D2 | IXYS | 8.57 $ | 20 | MOSFET N-CH 200V 16A TO-2... |
IXTH30N50L2 | IXYS | 9.03 $ | 23 | MOSFET N-CH 500V 30A TO-2... |
IXTH64N65X | IXYS | 9.09 $ | 18 | MOSFET N-CH 650V 64A TO-2... |
IXTH13N110 | IXYS | -- | 14 | MOSFET N-CH 1.1KV 13A TO-... |
IXTH60N10 | IXYS | 15.69 $ | 1000 | MOSFET N-CH 100V 60A TO-2... |
IXTH3N200P3HV | IXYS | 17.33 $ | 1000 | MOSFET N-CH 2000V 3A TO-2... |
IXTH50P085 | IXYS | 0.0 $ | 1000 | MOSFET P-CH 85V 50A TO-24... |
IXTH150N17T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 175V 150A TO-... |
IXTH12N120 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1200V 12A TO-... |
IXTH152N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 152A TO-2... |
IXTH160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
IXTH180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-2... |
IXTH182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-2... |
IXTH200N075T | IXYS | -- | 1000 | MOSFET N-CH 75V 200A TO-2... |
IXTH200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
IXTH220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
IXTH220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
IXTH230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-2... |
IXTH240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
IXTH250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-2... |
IXTH280N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 280A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
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