IXTH1N200P3 Allicdata Electronics
Allicdata Part #:

IXTH1N200P3-ND

Manufacturer Part#:

IXTH1N200P3

Price: $ 5.04
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 2000V 1A TO-247
More Detail: N-Channel 2000V 1A (Tc) 125W (Tc) Through Hole TO-...
DataSheet: IXTH1N200P3 datasheetIXTH1N200P3 Datasheet/PDF
Quantity: 45
1 +: $ 4.58010
30 +: $ 3.75753
120 +: $ 3.39102
510 +: $ 2.84113
1020 +: $ 2.47453
Stock 45Can Ship Immediately
$ 5.04
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 40 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 25V
FET Feature: --
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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IXTH1N200P3 is a type of semiconductor device known as an insulated-gate field-effect transitor (IGFET), commonly referred to as a MOSFET. It is a single-transistor device, meaning that it consists of a single metal-oxide semiconductor (MOS) structure connected between two leads. The IXTH1N200P3 is a popular MOSFET because it is easy to operate, reliable, and has an impressive power handling capability.

The IXTH1N200P3 works by allowing electrical current to flow through two levels of silicon. The first level is a semiconductor channel, which is connected to the control gate. The channel is filled with holes, and when the control gate is biased with a voltage, the holes move and electric current is able to flow. At the same time, the second level is a dielectric layer, which is separated from the channel by a thin layer of gate insulator. The dielectric layer is filled with electrons, and when the control gate is biased, the electrons move and prevent electric current from flowing. This process is what allows the IXTH1N200P3 to act like a switch and turn electric current on and off.

The IXTH1N200P3 is used in a variety of applications, including power control for motors, electric heaters, and rocket engines. It is also used in digital circuits to control the flow of current through a circuit. The IXTH1N200P3 can be used in linear applications, as well, such as amplifiers and voltage regulators. Additionally, due to its high switching speed, it can be used in high speed applications like switching power supplies and digital ICs.

The IXTH1N200P3 is efficient, reliable, and easy to use, making it a popular choice in many applications. It is also inexpensive, which makes it even more attractive. The IXTH1N200P3 is a great choice for any application where power control, fast switching, and reliability are required.

The specific data is subject to PDF, and the above content is for reference

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