IXTH3N100P

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	PolarVHV™
Rds On (Max) @ Id, Vgs:	4.8 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXTH3N100P is an insulated-gate field effect transistor (IGFET) used in many different applications, such as low-voltage switching, high-speed switching and power amplification. The device is composed of a main transistor and three diodes, which create a unique structure that is well suited for many applications.This device operates under the principle of a static, field effect transistor and uses a voltage applied to the gate to control the conductivity of the main transistor. The device is made up of three parts, the base, the collector and the emitter, as well as the gate. The gate is insulated from the base and collector and is made out of either silicon or metal. The voltage that is applied to the gate is effectively transferred to the main transistor, and based on the amount of voltage applied, the current flowing through the main transistor can be changed.The IXTH3N100P is ideal for use in digital logic because of its strong switching capabilities. The device is capable of quickly turning on and off and is thus well suited for circuits that require a high amount of switching power.The IXTH3N100P is also great for low-voltage, high-speed switching because of its low “on” resistance. The device’s low “on” resistance means that it can switch quickly and efficiently without consuming a large amount of power.The IXTH3N100P is also well suited for use in applications that require power amplification. The device’s high current gain and low power dissipation makes it ideal for amplifying signals for applications such as audio amplifiers and motor drives.The IXTH3N100P is generally considered to be a more reliable option for applications that require high currents, due to its low on-resistance and high breakdown voltage. The device is also well suited for applications that require RF frequencies, thanks to its low capacitance.The IXTH3N100P has a wide range of uses, making it one of the most versatile IGFETs on the market. It can be used in both digital logic and low-voltage switching applications, as well as power amplification and RF applications. The device has a long life expectancy and is easily integrated into most electronic circuitry.

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