| Allicdata Part #: | IXTH220N055T-ND |
| Manufacturer Part#: |
IXTH220N055T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 55V 220A TO-247 |
| More Detail: | N-Channel 55V 220A (Tc) 430W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH220N055T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | TrenchMV™ |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55V |
| Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 158nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 430W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 (IXTH) |
| Package / Case: | TO-247-3 |
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The IXTH220N055T is a member of the family of immersed gate power field effect transistors (FETs). It is a general-purpose voltage-controlled switching device with a wide range of applications. It is designed to operate in either the enhancement or the depletion mode, and it is the only device of its kind to feature a dual gate structure.
The IXTH220N055T is used for a variety of applications where high voltage requirements exist, such as high voltage switching and power control. Due to its wide range of operating voltages, it can be used in a variety of circuit configurations. In addition, it is capable of operating at high temperatures, making it an ideal choice for backlight circuitry, DC-DC converters, and other high temperature applications.
In terms of working principles, the IXTH220N055T is a voltage-controlled device, meaning it operates by the application of a voltage to its gate in order to cause a change in the flow of current through its channel. The voltage applied to the gate determines the level of current that is allowed to flow through the channel, thus allowing the user to control the flow of current down the load.
When operating in enhancement mode, an increase in voltage applied to the gate of the IXTH220N055T causes an increase in current flow, up to the maximum level. Conversely, when operating in the depletion mode, a decrease in voltage causes the current flow to decrease, again up to the maximum level.
The IXTH220N055T also offers several advantages over other FETs or MOSFETs. For instance, it has a low on-resistance rating, meaning it produces less resistance for the same amount of current applied. This allows for higher levels of efficiency in the circuit and better overall performance. In addition, its low noise emission, coupled with a wide range of operating temperatures, make the IXTH220N055T an ideal choice for switching applications in industries such as solar energy and wind power.
The IXTH220N055T also has several unique features and applications. For instance, it can be configured to operate with dual gate protection, meaning it can protect itself if exposed to large supply voltages or if exposed to high temperatures. It also features low on-resistance, making it an ideal choice for portable electronics, such as cell phones, as well as home appliances, such as refrigerators.
In conclusion, the IXTH220N055T is an ideal choice for applications in which high voltage requirements and/or high temperatures exist. Its wide range of operating voltages and low on-resistance rating make it suitable for a variety of switching applications, from energy and power control to consumer electronics. Furthermore, its dual gate protection capability can be used to protect the device from large and high temperature supply voltages. The IXTH220N055T is definitely the device of choice for applications in which efficiency and reliability are key.
The specific data is subject to PDF, and the above content is for reference
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